公开(公告)号：US20240209284A1

公开(公告)日：2024-06-27

申请号：US18533556

申请日：2023-12-08

Applicant: FUJIFILM Corporation

Inventor： Naotsugu MURO ,  Tadashi Inaba ,  Tetsuya Kamimura

IPC: C11D1/22 ,  C11D3/20 ,  C11D3/33 ,  C11D3/36 ,  H01L21/02

CPC classification number: C11D1/22 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/33 ,  C11D3/361 ,  C11D3/364 ,  H01L21/02074

Abstract: The present invention provides a cleaning composition having excellent storage stability, a cleaning method of a semiconductor substrate, and a manufacturing method of a semiconductor element. The cleaning composition of the present invention contains a polycarboxylic acid, a chelating agent, a sulfonic acid having an alkyl group having 9 to 18 carbon atoms, and water, in which a mass ratio of the polycarboxylic acid to the chelating agent is 10 to 200, a mass ratio of the polycarboxylic acid to the sulfonic acid is 70 to 1,000, a pH is 0.10 to 4.00, and an electrical conductivity is 0.08 to 11.00 mS/cm.

公开(公告)号：US09548217B2

公开(公告)日：2017-01-17

申请号：US14711070

申请日：2015-05-13

Applicant: FUJIFILM CORPORATION

Inventor： Naotsugu Muro ,  Tetsuya Kamimura ,  Tadashi Inaba ,  Atsushi Mizutani

IPC: H01L21/461 ,  H01L21/3213 ,  H01L21/311 ,  C09K13/08

CPC classification number: H01L21/32134 ,  C09K13/08 ,  H01L21/31144

Abstract: An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.

Abstract translation: 一种蚀刻方法，其特征在于，在具有含有氮化钛（TiN）的第一层和含有过渡金属的第二层的基板的处理时，选择其中第一层的表面氧含量为0.1〜10％ 并将含有氢氟酸化合物和氧化剂的蚀刻液施加到基材上，从而除去第一层。

公开(公告)号：US20140120734A1

公开(公告)日：2014-05-01

申请号：US14146142

申请日：2014-01-02

Applicant: Fujifilm Electronic Materials U.S.A., Inc. ,  FUJIFILM Corporation

Inventor： Tomonori Takahashi ,  Tadashi Inaba ,  Atsushi Mizutani ,  Bing Du ,  William A. Wojtczak ,  Kazutaka Takahashi ,  Tetsuya Kamimura

IPC: H01L21/3213 ,  C23F1/30

CPC classification number: H01L21/32134 ,  C09K13/06 ,  C23F1/16 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/28518 ,  H01L21/76843

Abstract: This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water.

Abstract translation: 本公开涉及一种用于制造半导体器件的方法。 该方法包括用蚀刻组合物蚀刻半导体衬底上的金属膜; 并用冲洗溶剂冲洗蚀刻的金属膜。 蚀刻组合物包含至少一种酸; 至少一种含卤化物阴离子的化合物，卤化物阴离子是氯化物或溴化物; 至少一种含有硝酸根或亚硝酰离子的化合物; 和水。

公开(公告)号：US09159572B2

公开(公告)日：2015-10-13

申请号：US14316327

申请日：2014-06-26

Applicant: FUJIFILM Corporation

Inventor： Masashi Enokido ,  Tadashi Inaba ,  Atsushi Mizutani

IPC: H01L21/306 ,  H01L21/308 ,  H01L49/02 ,  H01L21/02 ,  H01L21/3213 ,  H01L27/108

CPC classification number: H01L21/30608 ,  H01L21/02068 ,  H01L21/3081 ,  H01L21/32134 ,  H01L27/10852 ,  H01L28/92

Abstract: A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80° C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film.

Abstract translation: 一种制造半导体衬底产品的方法，该方法包括：制备含有7质量％以上且25质量％以下的季铵烷基氢氧化铵的水溶液的工序; 制备具有包括多晶硅膜或非晶硅膜的硅膜的半导体衬底的步骤; 以及在80℃以上加热水溶液的步骤，将所得水溶液施加到半导体衬底上以蚀刻至少一部分硅膜。

公开(公告)号：US11145514B2

公开(公告)日：2021-10-12

申请号：US15647351

申请日：2017-07-12

Applicant: FUJIFILM Corporation

Inventor： Satomi Takahashi ,  Seongmu Bak ,  Atsushi Mizutani ,  Tadashi Inaba

IPC: H01L21/304 ,  H01L21/02 ,  C07D213/70 ,  H01L21/311 ,  C07D249/12 ,  C07D239/40 ,  C07C323/12 ,  C07C323/52 ,  C07C323/58 ,  H01L21/306 ,  C07C321/04 ,  C07C321/22 ,  C07C321/26 ,  C22B30/04 ,  C22B58/00 ,  H01L21/308

Abstract: Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

公开(公告)号：US10403491B2

公开(公告)日：2019-09-03

申请号：US15854778

申请日：2017-12-27

Applicant: FUJIFILM Corporation

Inventor： Atsushi Mizutani ,  Tadashi Inaba

IPC: H01L21/02 ,  B08B3/08 ,  C08K3/16 ,  C08K5/17 ,  B81C1/00

Abstract: Provided are a method for treating a pattern structure which is capable of inhibiting collapse of a pattern structure, a method for manufacturing an electronic device including such a treatment method, and a treatment liquid for inhibiting collapse of a pattern structure. The method for treating a pattern structure includes applying a treatment liquid containing a fluorine-based polymer having a repeating unit containing a fluorine atom to a pattern structure formed of an inorganic material.

公开(公告)号：US09558953B2

公开(公告)日：2017-01-31

申请号：US14593150

申请日：2015-01-09

Applicant: FUJIFILM Corporation

Inventor： Naotsugu Muro ,  Tetsuya Kamimura ,  Tadashi Inaba ,  Takahiro Watanabe ,  Kee Young Park

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/30608 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134

Abstract: An etching method, having the step of applying an etching liquid onto a TiN-containing layer in a semiconductor substrate thereby etching the TiN-containing layer, the etching liquid comprising water, and a basic compound and an oxidizing agent in water thereof to be within the range of pH from 8.5 to 14, and the TiN-containing layer having a surface oxygen content from 0.1 mol % to 10 mol %.

Abstract translation: 一种蚀刻方法，具有将蚀刻液施加到半导体衬底中的含TiN层上的步骤，从而蚀刻含TiN层，将含有水的蚀刻液，水中的碱性化合物和氧化剂在其内 pH为8.5〜14的范围，表面氧含量为0.1摩尔％〜10摩尔％的含TiN的层。

公开(公告)号：US09514958B2

公开(公告)日：2016-12-06

申请号：US14722811

申请日：2015-05-27

Applicant: FUJIFILM Corporation

Inventor： Yoshinori Nishiwaki ,  Tetsuya Kamimura ,  Tadashi Inaba ,  Atsushi Mizutani

IPC: H01L21/302 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/033 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/32134 ,  C09K13/00 ,  H01L21/02063 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32139

Abstract: An etching method containing the step of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal by bringing an etching liquid into contact with the substrate and thereby removing the first layer, wherein the first layer has a surface oxygen content from 0.1 to 10% by mole, and wherein the etching liquid comprises an ammonia compound and an oxidizing agent, and has a pH of from 7 to 14.

Abstract translation: 一种蚀刻方法，包括通过使蚀刻液体与基板接触从而去除第一层，来处理具有包含氮化钛（TiN）的第一层的基板和包含过渡金属的第二层的步骤，其中第一层具有 表面氧含量为0.1〜10摩尔％，其中，蚀刻液含有氨化合物和氧化剂，pH为7〜14。

公开(公告)号：US08889025B2

公开(公告)日：2014-11-18

申请号：US14146142

申请日：2014-01-02

Applicant: FUJIFILM Corporation ,  Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Tomonori Takahashi ,  Tadashi Inaba ,  Atsushi Mizutani ,  Bing Du ,  William A. Wojtczak ,  Kazutaka Takahashi ,  Tetsuya Kamimura

IPC: C03C15/00 ,  H01L21/3213 ,  C09K13/06 ,  C23F1/16 ,  C23F1/30 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/32134 ,  C09K13/06 ,  C23F1/16 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/28518 ,  H01L21/76843

Abstract: This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water.

Abstract translation: 本公开涉及一种用于制造半导体器件的方法。 该方法包括用蚀刻组合物蚀刻半导体衬底上的金属膜; 并用冲洗溶剂冲洗蚀刻的金属膜。 蚀刻组合物包含至少一种酸; 至少一种含卤化物阴离子的化合物，卤化物阴离子是氯化物或溴化物; 至少一种含有硝酸根或亚硝酰离子的化合物; 和水。