Invention Grant
US09159667B2 Methods of forming an e-fuse for an integrated circuit product and the resulting e-fuse structure
有权
形成用于集成电路产品的电熔丝的方法和所得的电熔丝结构
- Patent Title: Methods of forming an e-fuse for an integrated circuit product and the resulting e-fuse structure
- Patent Title (中): 形成用于集成电路产品的电熔丝的方法和所得的电熔丝结构
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Application No.: US13951654Application Date: 2013-07-26
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Publication No.: US09159667B2Publication Date: 2015-10-13
- Inventor: Xiaoqiang Zhang , O Sung Kwon , Jianghu Yan , Wen-Hu Hung , Roderick Miller , HongLiang Shen
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L23/525 ; H01L21/768 ; H01L27/06
Abstract:
An e-fuse device disclosed herein includes an anode and a cathode that are conductively coupled to the doped region formed in a substrate, wherein the anode includes a first metal silicide region positioned on the doped region and a first conductive metal-containing contact that is positioned above and coupled to the first metal silicide region, and the cathode includes a second metal silicide region positioned on the doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to the second metal silicide region. A method disclosed herein includes forming a doped region in a substrate for an e-fuse device and performing at least one common process operation to form a first conductive structure on the doped region of the e-fuse device and a second conductive structure on a source/drain region of a transistor.
Public/Granted literature
- US20150028447A1 METHODS OF FORMING AN E-FUSE FOR AN INTEGRATED CIRCUIT PRODUCT AND THE RESULTING E-FUSE STRUCTURE Public/Granted day:2015-01-29
Information query
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