Invention Grant
- Patent Title: Method of fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13617305Application Date: 2012-09-14
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Publication No.: US09159779B2Publication Date: 2015-10-13
- Inventor: Beom-Yong Kim , Yun-Hyuck Ji , Seung-Mi Lee
- Applicant: Beom-Yong Kim , Yun-Hyuck Ji , Seung-Mi Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0070952 20120629
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/768 ; H01L49/02 ; H01L29/66 ; H01L29/94
Abstract:
A method for fabricating a semiconductor device includes forming a metal layer over a substrate, forming a capping layer over the metal layer, and densifying the metal layer through a heat treatment.
Public/Granted literature
- US20140004679A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2014-01-02
Information query
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