Invention Grant
- Patent Title: P-type semiconductor material and semiconductor device
- Patent Title (中): P型半导体材料和半导体器件
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Application No.: US14323575Application Date: 2014-07-03
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Publication No.: US09159793B2Publication Date: 2015-10-13
- Inventor: Yoshinobu Asami , Riho Kataishi , Erumu Kikuchi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2012-032644 20120217; JP2012-032659 20120217; JP2012-092002 20120413
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/267 ; H01L29/20 ; H01L29/786 ; H01L31/0328 ; H01L31/074 ; H01L29/861
Abstract:
An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoOy (2
Public/Granted literature
- US20150001535A1 P-Type Semiconductor Material and Semiconductor Device Public/Granted day:2015-01-01
Information query
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