Invention Grant
- Patent Title: Applying a voltage-delay correction to a non-defective memory block that replaces a defective memory block based on the actual location of the non-defective memory block
- Patent Title (中): 对基于无缺陷存储器块的实际位置替换缺陷存储器块的无缺陷存储器块进行电压延迟校正
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Application No.: US14224543Application Date: 2014-03-25
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Publication No.: US09165681B2Publication Date: 2015-10-20
- Inventor: Vishal Sarin , Dzung H. Nguyen , William H. Radke
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C29/04 ; G11C29/00
Abstract:
In an embodiment, a defective memory block is replaced with a non-defective memory block, and a voltage-delay correction is applied to the non-defective memory block that replaces the defective memory block based on the actual location of the non-defective memory block.
Public/Granted literature
Information query
