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    MEMORY DEVICES HAVING DIFFERENTLY CONFIGURED BLOCKS OF MEMORY CELLS
    3.
    发明申请
    MEMORY DEVICES HAVING DIFFERENTLY CONFIGURED BLOCKS OF MEMORY CELLS 审中-公开

    公开(公告)号：US20190340066A1

    公开(公告)日：2019-11-07

    申请号：US16516611

    申请日：2019-07-19

    申请人： MICRON TECHNOLOGY, INC.

    发明人： William H. Radke ,  Tommaso Vali ,  Michele Incarnati

    IPC分类号： G06F11/10 ,  G11C29/52 ,  G06F3/06 ,  G06F12/06 ,  G11C16/04 ,  G06F12/02 ,  G11C16/10 ,  G11C11/56

    摘要： A memory device has a plurality of individually erasable blocks of memory cells and a controller configured to configure a first block of memory cells of the plurality of blocks of memory cells in a first configuration comprising one or more groups of overhead data memory cells, to configure a second block of memory cells of the plurality of blocks of memory cells in a second configuration comprising a group of user data memory cells and a group of overhead data memory cells, and to configure a third block of memory cells of the plurality of blocks of memory cells in a third configuration comprising only a group of user data memory cells. The group of overhead data memory cells of the second block of memory cells has a different storage capacity than at least one group of overhead data memory cells of the one or more groups of overhead data memory cells of the first block of memory cells.

    Inferring threshold voltage distributions associated with memory cells via interpolation
    4.
    发明授权
    Inferring threshold voltage distributions associated with memory cells via interpolation 有权

    公开(公告)号：US10068655B2

    公开(公告)日：2018-09-04

    申请号：US15689955

    申请日：2017-08-29

    申请人： Micron Technology, Inc.

    发明人： Zhenlei Shen ,  William H. Radke

    IPC分类号： G11C16/04 ,  G11C16/34 ,  G11C11/56 ,  G11C16/10

    摘要： Apparatuses and methods for inferring threshold voltage distributions associated with memory cells via interpolation are described herein. A number of embodiments include determining soft data for a group of memory cells each programmed to one of a number of data states, wherein the soft data comprises a number of different soft data values, determining a quantity of memory cells associated with each of the different soft data values, and inferring at least a portion of a threshold voltage distribution associated with the group of memory cells via an interpolation process using the determined quantities of memory cells associated with each of the different soft data values.

    Fractional bits in memory cells
    7.
    发明授权
    Fractional bits in memory cells 有权
    存储单元中的分数位

    公开(公告)号：US09349441B2

    公开(公告)日：2016-05-24

    申请号：US14599786

    申请日：2015-01-19

    申请人： Micron Technology, Inc.

    发明人： William H. Radke

    IPC分类号： G11C16/04 ,  G11C11/56 ,  G11C16/10 ,  G06F11/10 ,  G11C29/00

    CPC分类号： G11C11/5628 ,  G06F11/1008 ,  G11C11/5621 ,  G11C11/5642 ,  G11C16/04 ,  G11C16/0483 ,  G11C16/10 ,  G11C29/00 ,  G11C2211/5641

    摘要： Methods, devices, modules, and systems for programming memory cells are disclosed. One method embodiment includes storing charges corresponding to a data state that represents an integer number of bits in a set of memory cells. The method also includes storing a charge in a cell of the set, where the charge corresponds to a programmed state, where the programmed state represents a fractional number of bits, and where the programmed state denotes a digit of the data state as expressed by a number in base N, where N is equal to 2B, rounded up to an integer, and where B is equal to the fractional number of bits represented by the programmed state.

    摘要翻译： 公开了用于编程存储器单元的方法，装置，模块和系统。 一个方法实施例包括存储与在一组存储器单元中表示整数位的数据状态相对应的电荷。 该方法还包括将电荷存储在组的单元中，其中电荷对应于编程状态，其中编程状态表示分数位数，并且其中编程状态表示数据状态的数字，如 基数N中的数，其中N等于2B，向上舍入为整数，并且其中B等于由编程状态表示的分数位数。