Invention Grant
- Patent Title: Semiconductor device having stable gate structure and method of manufacturing the same
- Patent Title (中): 具有稳定栅极结构的半导体器件及其制造方法
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Application No.: US14328247Application Date: 2014-07-10
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Publication No.: US09166011B2Publication Date: 2015-10-20
- Inventor: Seong Il Kim , Dong Min Kang , Sang Heung Lee , Ho Kyun Ahn , Hyung Sup Yoon , Byoung Gue Min , Jong Won Lim
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2014-0017242 20140214
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L29/423 ; H01L29/778 ; H01L21/283 ; H01L21/28
Abstract:
Disclosed are a semiconductor device having a stable gate structure, and a manufacturing method thereof, in which a gate structure is stabilized by additionally including a plurality of gate feet under a gate head in a width direction of the gate head so as to serve as supporters in a gate structure including a fine gate foot having a length of 0.2 μm or smaller, and the gate head having a predetermined size. Accordingly, it is possible to prevent the gate electrode of the semiconductor device from collapsing, and improve reliability of the semiconductor device during or after the process of the semiconductor device.
Public/Granted literature
- US20150236108A1 SEMICONDUCTOR DEVICE HAVING STABLE GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-08-20
Information query
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