Invention Grant
- Patent Title: Diffusionless transformations in MTJ stacks
- Patent Title (中): MTJ堆栈中的无扩散变换
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Application No.: US13839672Application Date: 2013-03-15
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Publication No.: US09166152B2Publication Date: 2015-10-20
- Inventor: Keith Chan , Alexey Vasilyevitch Khvalkovskiy , Dmytro Apalkov
- Applicant: Samsung Electronics Co., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Convergent Law Group LLP
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/12 ; H01L27/22
Abstract:
A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a plurality of magnetic layers including a nonmagnetic spacer layer. The magnetic junction also includes at least one diffusionless transformation layer. The magnetic junction is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Public/Granted literature
- US20140175578A1 DIFFUSIONLESS TRANSFORMATIONS IN MTJ STACKS Public/Granted day:2014-06-26
Information query
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