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    COMPUTING SYSTEM WITH ADAPTIVE BACK-UP MECHANISM AND METHOD OF OPERATION THEREOF
    2.
    发明申请
    COMPUTING SYSTEM WITH ADAPTIVE BACK-UP MECHANISM AND METHOD OF OPERATION THEREOF 有权
    具有自适应备份机制的计算系统及其操作方法

    公开(公告)号：US20160267007A1

    公开(公告)日：2016-09-15

    申请号：US15160780

    申请日：2016-05-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hongzhong Zheng ,  Keith Chan ,  Wonseok Lee ,  Tackhwi Lee

    IPC: G06F12/08 ,  G06F11/20

    CPC classification number: G06F12/0804 ,  G06F11/1441 ,  G06F11/2015 ,  G06F12/0868 ,  G06F2212/1032

    Abstract: A computing system includes: an adaptive back-up controller configured to calculate an adaptive back-up time based on a reserve power source for backing up a volatile memory to a nonvolatile memory; and a processor core, coupled to the adaptive back-up controller, configured to back up at least a portion of the volatile memory to the nonvolatile memory within the adaptive back-up time based on a back-up priority.

    Abstract translation: 计算系统包括：自适应备份控制器，被配置为基于用于将易失性存储器备份到非易失性存储器的备用电源来计算自适应备份时间; 以及耦合到所述自适应备份控制器的处理器核心，被配置为基于备份优先级在所述自适应备份时间内将所述易失性存储器的至少一部分备份到所述非易失性存储器。

    DIFFUSIONLESS TRANSFORMATIONS IN MTJ STACKS
    3.
    发明申请
    DIFFUSIONLESS TRANSFORMATIONS IN MTJ STACKS 有权
    MTJ堆栈中的无差异变换

    公开(公告)号：US20140175578A1

    公开(公告)日：2014-06-26

    申请号：US13839672

    申请日：2013-03-15

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Keith Chan ,  Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov

    IPC: H01L43/02

    CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08

    Abstract: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a plurality of magnetic layers including a nonmagnetic spacer layer. The magnetic junction also includes at least one diffusionless transformation layer. The magnetic junction is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 一种方法和系统提供可用于磁性装置的磁结。 磁结包括包括非磁性间隔层的多个磁性层。 磁结还包括至少一个无扩散转变层。 磁结被配置为当写入电流通过磁结时在多个稳定磁状态之间切换。

    Computing system with adaptive back-up mechanism and method of operation thereof
    4.
    发明授权
    Computing system with adaptive back-up mechanism and method of operation thereof 有权
    具有自适应后备机制的计算系统及其操作方法

    公开(公告)号：US09372759B2

    公开(公告)日：2016-06-21

    申请号：US14501851

    申请日：2014-09-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hongzhong Zheng ,  Keith Chan ,  Wonseok Lee ,  Tackhwi Lee

    IPC: G06F11/00 ,  G06F11/14

    CPC classification number: G06F11/1456 ,  G06F11/1441 ,  G06F11/1471 ,  G06F11/2015

    Abstract: A computing system includes: an adaptive back-up controller configured to calculate an adaptive back-up time based on a reserve power source for backing up a volatile memory to a nonvolatile memory; and a processor core, coupled to the adaptive back-up controller, configured to back up at least a portion of the volatile memory to the nonvolatile memory within the adaptive back-up time.

    Abstract translation: 计算系统包括：自适应备份控制器，被配置为基于用于将易失性存储器备份到非易失性存储器的备用电源来计算自适应备份时间; 以及耦合到所述自适应备用控制器的处理器核心，被配置为在所述自适应备份时间内将所述易失性存储器的至少一部分备份到所述非易失性存储器。

    METHOD AND SYSTEM FOR PROVIDING AN ENGINEERED MAGNETIC LAYER INCLUDING HEUSLER LAYERS AND AN AMORPHOUS INSERTION LAYER
    5.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING AN ENGINEERED MAGNETIC LAYER INCLUDING HEUSLER LAYERS AND AN AMORPHOUS INSERTION LAYER 有权
    用于提供工程磁层的方法和系统，包括高分子层和非晶层插入层

    公开(公告)号：US20150162378A1

    公开(公告)日：2015-06-11

    申请号：US14478963

    申请日：2014-09-05

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Matthew J. Carey ,  Keith Chan ,  Roman Chepulskyy

    IPC: H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

    CPC classification number: H01L43/12 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. At least one of the free and pinned layers includes at least one engineered Heusler structure having a first magnetic layer, a second magnetic layer and an amorphous layer between the magnetic layers. At least one of the first and second magnetic layer(s) is a Heusler layer. The first magnetic layer's perpendicular magnetic anisotropy energy (PMAE) exceeds is out-of-plane demagnetization energy. The second magnetic layer's PMAE exceeds its out-of-plane demagnetization energy. The free layer and/or the pinned layer has a PMAE greater than an out-of-plane demagnetization energy. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 至少一个自由层和被钉扎层包括至少一个设计的Heusler结构，其具有第一磁性层，第二磁性层和位于磁性层之间的非晶层。 第一和第二磁性层中的至少一个是Heusler层。 第一磁性层的垂直磁各向异性能（PMAE）超过了平面外退磁能。 第二磁性层的PMAE超过其平面外退磁能。 自由层和/或被钉扎层具有大于面外去磁能的PMAE。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。

    COMPUTING SYSTEM WITH ADAPTIVE BACK-UP MECHANISM AND METHOD OF OPERATION THEREOF
    6.
    发明申请
    COMPUTING SYSTEM WITH ADAPTIVE BACK-UP MECHANISM AND METHOD OF OPERATION THEREOF 有权
    具有自适应备份机制的计算系统及其操作方法

    公开(公告)号：US20150363272A1

    公开(公告)日：2015-12-17

    申请号：US14501851

    申请日：2014-09-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hongzhong Zheng ,  Keith Chan ,  Wonseok Lee ,  Tackhwi Lee

    IPC: G06F11/14

    CPC classification number: G06F11/1456 ,  G06F11/1441 ,  G06F11/1471 ,  G06F11/2015

    Abstract: A computing system includes: an adaptive back-up controller configured to calculate an adaptive back-up time based on a reserve power source for backing up a volatile memory to a nonvolatile memory; and a processor core, coupled to the adaptive back-up controller, configured to back up at least a portion of the volatile memory to the nonvolatile memory within the adaptive back-up time.

    Abstract translation: 计算系统包括：自适应备份控制器，被配置为基于用于将易失性存储器备份到非易失性存储器的备用电源来计算自适应备份时间; 以及耦合到所述自适应备用控制器的处理器核心，被配置为在所述自适应备份时间内将所述易失性存储器的至少一部分备份到所述非易失性存储器。

    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS WITH RARE EARTH-TRANSITION METAL LAYERS
    10.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS WITH RARE EARTH-TRANSITION METAL LAYERS 有权
    用稀土转移金属层提供磁结的方法和系统

    公开(公告)号：US20160005449A1

    公开(公告)日：2016-01-07

    申请号：US14730379

    申请日：2015-06-04

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Matthew J. Carey ,  Dmytro Apalkov ,  Keith Chan

    IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12

    CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic junction usable in magnetic devices is described. The magnetic junction includes a reference layer, a free layer, a nonmagnetic spacer layer between the reference and free layers, and a rare earth-transition metal (RE-TM) layer in the reference and/or free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. If the RE-TM layer is in the free layer then the RE-TM layer is between hard and soft magnetic layers in the free layer. In this aspect, the RE-TM layer has a standby magnetic moment greater than a write magnetic moment. If the RE-TM layer is in the reference layer, then the magnetic junction includes a second RE-TM layer. In this aspect, a first saturation magnetization quantity of the RE-TM layer matches a second saturation magnetization quantity of the second RE-TM layer over an operating temperature range.

    Abstract translation: 描述了可用于磁性装置的磁结。 磁结包括参考层，自由层，参考层和自由层之间的非磁性间隔层，以及参考和/或自由层中的稀土 - 过渡金属（RE-TM）层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 如果RE-TM层在自由层中，那么RE-TM层在自由层的硬磁层和软磁层之间。 在这方面，RE-TM层具有大于写入磁矩的待机磁矩。 如果RE-TM层在参考层中，则磁结包括第二RE-TM层。 在这方面，RE-TM层的第一饱和磁化量在工作温度范围内匹配第二RE-TM层的第二饱和磁化量。

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