发明授权
- 专利标题： Vertical cavity surface emitting laser, vertical cavity surface emitting laser apparatus, optical transmission apparatus, and information processing apparatus
- 专利标题（中）： 垂直腔面发射激光器，垂直腔面发射激光装置，光传输装置和信息处理装置
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申请号： US13456909申请日： 2012-04-26
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公开(公告)号： US09166370B2公开(公告)日： 2015-10-20
- 发明人: Takashi Kondo , Hideo Nakayama , Kazutaka Takeda , Fumio Koyama
- 申请人： Takashi Kondo , Hideo Nakayama , Kazutaka Takeda , Fumio Koyama
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： FUJI XEROX CO., LTD.,TOKYO INSTITUTE OF TECHNOLOGY
- 当前专利权人： FUJI XEROX CO., LTD.,TOKYO INSTITUTE OF TECHNOLOGY
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Oliff PLC
- 优先权： JP2011-219707 20111004
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/183 ; H01S5/10 ; H01S5/32 ; H01S5/20
摘要：
A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect.