公开(公告)号：US09166370B2

公开(公告)日：2015-10-20

申请号：US13456909

申请日：2012-04-26

申请人： Takashi Kondo ,  Hideo Nakayama ,  Kazutaka Takeda ,  Fumio Koyama

发明人： Takashi Kondo ,  Hideo Nakayama ,  Kazutaka Takeda ,  Fumio Koyama

IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/10 ,  H01S5/32 ,  H01S5/20

CPC分类号： H01S5/18358 ,  H01S5/1039 ,  H01S5/18311 ,  H01S5/209 ,  H01S5/3211

摘要： A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect.

摘要翻译： 垂直腔表面发射激光器包括第一半导体多层反射器，谐振器和第二半导体多层反射器。 第一半导体多层反射器形成在基板上，并且通过堆叠具有较高折射率的高折射率层和折射率相对较低的低折射率层而构成。 谐振器包括形成在第一半导体多层反射器上的有源层。 第二半导体多层反射器通过层叠高折射率层和低折射率层而构成。 谐振器包括垂直于有源层设置的一对间隔层和形成在一对间隔层的一侧的谐振器延伸区域。 谐振器延伸区域包含其中具有晶体缺陷的能级高于没有晶体缺陷的一般能级的材料。

公开(公告)号：US08692264B2

公开(公告)日：2014-04-08

申请号：US13564295

申请日：2012-08-01

申请人： Taku Kinoshita ,  Michiaki Murata ,  Takashi Kondo ,  Kazutaka Takeda ,  Hideo Nakayama

发明人： Taku Kinoshita ,  Michiaki Murata ,  Takashi Kondo ,  Kazutaka Takeda ,  Hideo Nakayama

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/153 ,  B41J2/45 ,  H01L33/0016 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/14

摘要： Provided is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein the island structure includes a first side surface having a first depth such that the first side surface does not reach the current confining layer in a formation region of the shift thyristor and a second side surface having a second depth such that the second side surface reaches at least the current confining layer in a formation region of the light-emitting thyristor, and an oxidized region selectively oxidized from the second side surface is formed in the current confining layer in the formation region of the light-emitting thyristor.

摘要翻译： 提供了一种发光元件，包括半导体衬底，形成在半导体衬底上的岛状结构，至少包括电流限制层和p型和n型半导体层，形成在岛状结构中的发光晶闸管和 具有pnpn结构和形成在岛状结构中并具有pnpn结构的位移晶闸管，其中岛状结构包括具有第一深度的第一侧表面，使得第一侧表面在形成区域中不到达电流限制层 的第二侧表面和第二侧表面，使得第二侧表面至少达到发光晶闸管的形成区域中的电流限制层，并且形成从第二侧表面选择性氧化的氧化区域 在发光晶闸管的形成区域的电流限制层中。

公开(公告)号：US08759859B2

公开(公告)日：2014-06-24

申请号：US13562673

申请日：2012-07-31

申请人： Taku Kinoshita ,  Kazutaka Takeda ,  Takashi Kondo ,  Hideo Nakayama

发明人： Taku Kinoshita ,  Kazutaka Takeda ,  Takashi Kondo ,  Hideo Nakayama

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/153 ,  B41J2/45 ,  H01L33/0016 ,  H01L33/10 ,  H01L33/14 ,  H01L33/20 ,  H01L33/30

摘要： Disclosed is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein a groove portion having a depth such that the groove portion reaches at least the current confining layer is formed between a formation region of the shift thyristor of the island structure and a formation region of the light-emitting thyristor, and an oxidized region that is selectively oxidized from a side surface of the island structure and a side surface of the groove portion is formed in the current confining layer.

摘要翻译： 公开了一种发光元件，包括半导体衬底，形成在半导体衬底上的岛结构，至少包括电流限制层和p型和n型半导体层，形成在岛状结构中的发光晶闸管， 具有pnpn结构，以及形成在岛状结构中并具有pnpn结构的移位晶闸管，其中具有使得沟槽部分至少达到电流限制层的深度的沟槽部分形成在所述移位晶闸管的形成区域 岛结构和发光晶闸管的形成区域，以及从岛状结构的侧面选择性地氧化的氧化区域和沟槽部分的侧面形成在电流限制层中。

公开(公告)号：US20110150500A1

公开(公告)日：2011-06-23

申请号：US12775683

申请日：2010-05-07

申请人： Kazuyuki Matsushita ,  Hideo Nakayama ,  Masahiro Yoshikawa ,  Kazutaka Takeda

发明人： Kazuyuki Matsushita ,  Hideo Nakayama ,  Masahiro Yoshikawa ,  Kazutaka Takeda

IPC分类号： H04B10/04 ,  H01S5/18 ,  H01L21/28 ,  G11B7/00

CPC分类号： H01S5/18313 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18347 ,  H01S5/18377 ,  H01S5/18394

摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed on the substrate; a current narrowing layer that is formed inside of the columnar structure, and has a conductive region surrounded by an oxidization region selectively oxidized; a first electrode that is formed at a top of the columnar structure, and defines a beam window; a first insulating film that covers the beam window; and a second insulating film of which a second refractive index is larger than the first refractive index. A reflection ratio in a second region where the second insulating film is formed is lower than a reflection ratio in a first region where only the first insulating film is formed.

摘要翻译： 一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器; 活跃区域 第二半导体多层反射器; 形成在基板上的柱状结构; 形成在柱状结构内部的电流变窄层，具有被氧化区域包围的导电区域选择性氧化; 第一电极，其形成在所述柱状结构的顶部，并且限定梁窗; 覆盖梁窗的第一绝缘膜; 第二绝缘膜的第二折射率大于第一折射率。 在形成第二绝缘膜的第二区域中的反射率低于仅形成第一绝缘膜的第一区域中的反射率。

公开(公告)号：US08368972B2

公开(公告)日：2013-02-05

申请号：US13190022

申请日：2011-07-25

申请人： Kazutaka Takeda ,  Hideo Nakayama

发明人： Kazutaka Takeda ,  Hideo Nakayama

IPC分类号： H04N1/04 ,  H04N1/46

CPC分类号： H01S5/18311 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18355 ,  H01S5/18386

摘要： A surface-emitting semiconductor laser includes a substrate, a first semiconductor multi-layered reflector of a first conductivity type, an active region, a second semiconductor multi-layered reflector of a second conductivity type, a columnar structure, a current-confining layer including a conductive area surrounded with an oxidized area, a first electrode defining a light-emitting window, a first dielectric film covering the light-emitting window, and a second dielectric film formed on the first dielectric film. The second dielectric film has an asymmetrical shape having a long axis and a short axis, the second dielectric film is located at a position overlapping with the conductive area, the second refractive index n2 is greater than the first refractive index n1, the thickness of the first dielectric film is an odd multiple of λ/4·n1 (λ: oscillation wavelength), and the thickness of the second dielectric film is an odd multiple of λ/4·n2.

摘要翻译： 表面发射半导体激光器包括基板，第一导电类型的第一半导体多层反射器，有源区，第二导电类型的第二半导体多层反射器，柱状结构，电流限制层，包括 由氧化区域包围的导电区域，限定发光窗口的第一电极，覆盖发光窗口的第一电介质膜和形成在第一电介质膜上的第二电介质膜。 第二电介质膜具有长轴和短轴的不对称形状，第二电介质膜位于与导电区重叠的位置，第二折射率n2大于第一折射率n1， 第一电介质膜是λ/ 4·n1（λ：振荡波长）的奇数倍，第二电介质膜的厚度为λ/ 4·n2的奇数倍。

公开(公告)号：US06590917B2

公开(公告)日：2003-07-08

申请号：US09321711

申请日：1999-05-28

申请人： Hideo Nakayama ,  Akira Sakamoto ,  Takeshi Nakamura ,  Fumio Koyama

发明人： Hideo Nakayama ,  Akira Sakamoto ,  Takeshi Nakamura ,  Fumio Koyama

IPC分类号： H01S520

CPC分类号： H01S5/18361 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18394 ,  H01S5/423 ,  H01S2301/163 ,  H01S2301/166

摘要： A surface emitting laser and a surface emitting laser array capable of high-luminance optical output in fundamental transverse mode, which can be produced easily with good reproducibility and with small position variation. The surface emitting laser has an active layer region composed of an active layer and upper and lower spacer layers deposited on both sides thereof and reflection layers deposited on both sides of the active layer region, an upper reflecting layer deposited on the upper spacer layer of the active layer region, a lower reflecting layer deposited on the lower spacer layer of the active layer region, and a secondary cavity formed by a first mode control layer and a second mode control layer placed on the periphery of the region of emission of the laser beam at the upper reflecting layer.

摘要翻译： 表面发射激光器和表面发射激光器阵列，其能够在基本横向模式下具有高亮度光学输出，其可以容易地以良好的再现性和小的位置变化产生。表面发射激光器具有由有源层 并且沉积在其两侧上的上隔离层和下间隔层以及沉积在有源层区两侧的反射层，沉积在有源层区的上间隔层上的上反射层，沉积在下间隔层上的下反射层 以及由位于上反射层的激光束的发射区域的周围的第一模式控制层和第二模式控制层形成的次级空腔。

公开(公告)号：US08923742B2

公开(公告)日：2014-12-30

申请号：US13399104

申请日：2012-02-17

申请人： Osamu Ueno ,  Tomoaki Kojima ,  Hideo Nakayama ,  Masateru Yamamoto

发明人： Osamu Ueno ,  Tomoaki Kojima ,  Hideo Nakayama ,  Masateru Yamamoto

IPC分类号： G03G15/20

CPC分类号： G03G15/2007

摘要： A fixing device includes a transport member that transports a recording medium in a first direction, the recording medium having on one side thereof an image formed of an image forming material that is to be fixed by absorbing light; a first chip that has a first light-emitting area in which a plurality of light-emitting elements that emit light toward the one side of the recording medium are arranged two-dimensionally; and a second chip that has a second light-emitting area in which a plurality of light-emitting elements that emit light toward the one side of the recording medium are arranged two-dimensionally. A gap between the first light-emitting area and the second light-emitting area extends at an angle with respect to the first direction, and a portion of the first light-emitting area and a portion of the second light-emitting area overlap each other in the first direction.

摘要翻译： 定影装置包括：输送构件，其沿第一方向输送记录介质，所述记录介质的一侧具有通过吸收光而被固定的图像形成材料形成的图像; 具有第一发光区域的第一芯片，其中向记录介质的一侧发射光的多个发光元件被二维布置; 并且具有第二发光区域的第二芯片，其中向记录介质的一侧发射光的多个发光元件被二维布置。 第一发光区域和第二发光区域之间的间隙相对于第一方向成一角度延伸，并且第一发光区域和第二发光区域的一部分彼此重叠 在第一个方向。

公开(公告)号：US08477821B2

公开(公告)日：2013-07-02

申请号：US12861438

申请日：2010-08-23

申请人： Masahiro Yoshikawa ,  Hideo Nakayama

发明人： Masahiro Yoshikawa ,  Hideo Nakayama

IPC分类号： H01S5/00

CPC分类号： H01S5/18338 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18358

摘要： A vertical cavity surface emitting laser that includes: a substrate; a first reflector of a first conductive type formed on the substrate; an active region formed on the first reflector; a second reflector of a second conductive type formed on the active region; and a current confining layer formed between the first reflector and the second reflector; and a metallic electrode that is formed on the second reflector, and is electrically connected to the second reflector. A conductive region with an anisotropy where a length in a longitudinal direction is different from a length in a short direction is formed in the current confining layer, and an opening defining a beam aperture is formed in the metallic electrode, and a diameter of the opening in the longitudinal direction is smaller than the length of the conductive region in the longitudinal direction.

摘要翻译： 一种垂直腔表面发射激光器，包括：衬底; 形成在所述基板上的第一导电类型的第一反射器; 形成在所述第一反射器上的有源区; 形成在所述有源区上的第二导电类型的第二反射器; 以及形成在所述第一反射器和所述第二反射器之间的电流限制层; 以及金属电极，其形成在所述第二反射器上，并且电连接到所述第二反射器。 在电流限制层中形成具有纵向长度不同长度方向的各向异性的导电区域，并且在金属电极中形成限定了光束孔径的开口，开口部的直径 在长度方向上比导电区域的长度方向的长度小。

公开(公告)号：US08290670B2

公开(公告)日：2012-10-16

申请号：US11919500

申请日：2006-04-26

申请人： Tetsuji Tanaka ,  Masami Higaki ,  Hideo Nakayama ,  Eiichi Sakai ,  Hidenobu Tsukada

发明人： Tetsuji Tanaka ,  Masami Higaki ,  Hideo Nakayama ,  Eiichi Sakai ,  Hidenobu Tsukada

IPC分类号： B60W10/02 ,  B60W10/10 ,  F16H31/00 ,  F16H61/00 ,  G06F17/00 ,  G06F19/00

CPC分类号： F16H61/061 ,  F16H61/08 ,  F16H61/684 ,  F16H2059/363 ,  F16H2059/425 ,  F16H2061/0096 ,  Y10T477/6394 ,  Y10T477/6414 ,  Y10T477/69335

摘要： A clutch control device includes: a plurality of hydraulic clutches built into a transmission; a clutch switching pattern storage device in which a plurality of clutch switching patterns, each defining engage/release changeover timing with which the plurality of hydraulic clutches are engaged/released are stored in correspondence to individual speed change patterns adopted by the transmission; a clutch switching pattern selection device that selects a clutch switching pattern stored in the clutch switching pattern storage device in correspondence to a speed change pattern for the transmission at a time of speed change; and a hydraulic control device that executes hydraulic control for the plurality of hydraulic clutches in correspondence to the clutch switching pattern selected by the clutch switching pattern selection device.

摘要翻译： 离合器控制装置包括：内置于变速器中的多个液压离合器; 一种离合器切换模式存储装置，其中，与传送所采用的各个速度变化模式相对应地存储有多个离合器切换模式，每个离合器切换模式各自定义与多个液压离合器接合/释放的接合/释放切换定时; 离合器切换模式选择装置，其对应于速度变化时的变速器的变速模式，选择存储在离合器切换模式存储装置中的离合器切换模式; 以及液压控制装置，其对应于由离合器切换模式选择装置选择的离合器切换模式，对多个液压离合器执行液压控制。

公开(公告)号：US07684459B2

公开(公告)日：2010-03-23

申请号：US11338739

申请日：2006-01-25

申请人： Naotaka Mukoyama ,  Hideo Nakayama ,  Akemi Murakami ,  Ryoji Ishii ,  Yasuaki Kuwata

发明人： Naotaka Mukoyama ,  Hideo Nakayama ,  Akemi Murakami ,  Ryoji Ishii ,  Yasuaki Kuwata

IPC分类号： H01S3/097

CPC分类号： B82Y20/00 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3432 ,  H01L2924/00014

摘要： There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.

摘要翻译： 提供半导体激光装置。 半导体激光二极管的电极通过管芯连接接合，并且半导体激光二极管的电极预先包括Au和除Au之外的组合芯片的至少一种材料。