发明授权
- 专利标题: Semiconductor integrated circuit device and high-frequency power amplifier module
- 专利标题(中): 半导体集成电路器件和高频功率放大器模块
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申请号: US14366719申请日: 2012-12-05
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公开(公告)号: US09166531B2公开(公告)日: 2015-10-20
- 发明人: Masanori Iijima , Fuminori Morisawa
- 申请人: Murata Manufacturing Co., Ltd.
- 申请人地址: JP Kyoto
- 专利权人: MURATA MANUFACTURING CO., LTD.
- 当前专利权人: MURATA MANUFACTURING CO., LTD.
- 当前专利权人地址: JP Kyoto
- 代理机构: Pearne & Gordon LLP
- 优先权: JP2011-277875 20111220
- 国际申请: PCT/JP2012/081532 WO 20121205
- 国际公布: WO2013/094415 WO 20130627
- 主分类号: H03F3/04
- IPC分类号: H03F3/04 ; G05F1/10 ; H03F1/02 ; H03F1/30 ; H03F1/56 ; H03F3/195 ; H03F3/24 ; H03F3/45 ; H03F3/72 ; H03G1/00 ; H03F3/193 ; H03F3/213
摘要:
The invention provides a semiconductor integrated circuit device and a high-frequency power amplifier module capable of reducing variations in the transmission power characteristics. The semiconductor integrated circuit device and the high-frequency power amplifier module each include, for example, a bandgap reference circuit, a regulator circuit, and a reference-voltage correction circuit which is provided between the bandgap reference circuit and the regulator circuit and which includes a unity gain buffer. The reference-voltage correction circuit corrects variations in a bandgap voltage from the bandgap reference circuit. The reference-voltage correction circuit includes first to third resistance paths having mutually different resistance values, and corrects the variations by selectively supplying a current which reflects an output voltage of the unity gain buffer to any one of the first to third resistance paths. The selection in this case is performed by connecting a bonding wire to any one of the terminals REF1 to REF3.