Invention Grant
- Patent Title: Semiconductor device including enhanced variability
- Patent Title (中): 半导体器件包括增强的变异性
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Application No.: US14158917Application Date: 2014-01-20
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Publication No.: US09166588B2Publication Date: 2015-10-20
- Inventor: Kai D. Feng , Wai-Kin Li , Ping-Chuan Wang , Zhijian J. Yang
- Applicant: International Business Machines Corporation
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDIRES INC.
- Current Assignee: GLOBALFOUNDIRES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Cantor Colburn LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H03K19/003 ; H01L21/31 ; H01L27/088 ; H01L27/02 ; H01L21/8234 ; H01L21/266 ; H01L23/58
Abstract:
A Physical Unclonable Function (PUF) semiconductor device includes a semiconductor substrate, and a well formed in the semiconductor substrate. The well includes a first region having a first concentration of ions, and at least one second region having a second concentration that is less than the first concentration. First and second FETs are formed on the well. The first and second FETs have a voltage threshold mismatch with respect to one another based on the first region and the at least one second region.
Public/Granted literature
- US20150207505A1 SEMICONDUCTOR DEVICE INCLUDING ENHANCED VARIABILITY Public/Granted day:2015-07-23
Information query
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