Invention Grant
US09170308B2 Circuit and method for biasing a plate-shaped sensor element of semiconductor material
有权
用于偏置半导体材料的板状传感器元件的电路和方法
- Patent Title: Circuit and method for biasing a plate-shaped sensor element of semiconductor material
- Patent Title (中): 用于偏置半导体材料的板状传感器元件的电路和方法
-
Application No.: US14055703Application Date: 2013-10-16
-
Publication No.: US09170308B2Publication Date: 2015-10-27
- Inventor: Johan Raman , Pieter Rombouts
- Applicant: MELEXIS TECHNOLOGIES N.V.
- Applicant Address: BG Tessenderlo
- Assignee: MELEXIS TECHNOLOGIES N.V.
- Current Assignee: MELEXIS TECHNOLOGIES N.V.
- Current Assignee Address: BG Tessenderlo
- Agency: Workman Nydegger
- Main IPC: G01R33/07
- IPC: G01R33/07 ; H01L27/22 ; G01R21/08 ; G01R33/09 ; G01R33/00

Abstract:
Circuit and method for biasing a plate-shaped sensor element (2) made of doped semiconductor material and having a first resp. second excitation contact (C, A) connected to a first resp. second excitation node (Cn, An), and a first resp. second sense contact (B, D) connected to a first resp. second sense node (Bn, Dn). The plate-shaped sensor element is electrically isolated from a substrate or well (5) by means of a first PN-junction. The method comprises: a) applying to the first excitation node (Cn) a predefined first current (Iex) generated by a first current source (11); b) applying to the second excitation node (An) a second current (I′ex) generated by a controllable second source (12); c) controlling the second source (12) by means of a negative feedback loop based on a comparison between a value representative for a common mode voltage (Vcm) of the voltages (VB, VD) of the sense nodes (Bn, Dn) and a predefined reference voltage (Vref), such that the common mode voltage (Vcm) is substantially equal to the reference voltage (Vref).
Public/Granted literature
- US20140103921A1 CIRCUIT AND METHOD FOR BIASING A PLATE-SHAPED SENSOR ELEMENT OF SEMICONDUCTOR MATERIAL Public/Granted day:2014-04-17
Information query