Invention Grant
US09170480B2 Reflective extreme ultraviolet mask and method of forming a pattern using the same
有权
反射性极紫外线掩模和使用其形成图案的方法
- Patent Title: Reflective extreme ultraviolet mask and method of forming a pattern using the same
- Patent Title (中): 反射性极紫外线掩模和使用其形成图案的方法
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Application No.: US13918693Application Date: 2013-06-14
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Publication No.: US09170480B2Publication Date: 2015-10-27
- Inventor: Dong-gun Lee , Seong-Sue Kim , Tae-Geun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co. LTD.
- Current Assignee: Samsung Electronics Co. LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0042281 20100506
- Main IPC: G03F1/24
- IPC: G03F1/24 ; B82Y10/00 ; B82Y40/00
Abstract:
According to example embodiments, a reflective EUV mask may include a mask substrate, a patterned structure and a non-patterned structure on the mask substrate. At least one of the patterned structure and the non-patterned structure may include a thermally treated region configured to reduce a reflectivity of the respective patterned and non-patterned structure.
Public/Granted literature
- US20130288166A1 REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF FORMING A PATTERN USING THE SAME Public/Granted day:2013-10-31
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