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    Reflective extreme ultraviolet mask and method of forming a pattern using the same
    1.
    发明授权
    Reflective extreme ultraviolet mask and method of forming a pattern using the same 有权
    反射性极紫外线掩模和使用其形成图案的方法

    公开(公告)号：US09170480B2

    公开(公告)日：2015-10-27

    申请号：US13918693

    申请日：2013-06-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-gun Lee ,  Seong-Sue Kim ,  Tae-Geun Kim

    IPC: G03F1/24 ,  B82Y10/00 ,  B82Y40/00

    CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00

    Abstract: According to example embodiments, a reflective EUV mask may include a mask substrate, a patterned structure and a non-patterned structure on the mask substrate. At least one of the patterned structure and the non-patterned structure may include a thermally treated region configured to reduce a reflectivity of the respective patterned and non-patterned structure.

    Abstract translation: 根据示例实施例，反射型EUV掩模可以包括掩模基板，图案化结构和掩模基板上的非图案化结构。 图案化结构和非图案化结构中的至少一个可以包括被配置为减少相应的图案化和非图案化结构的反射率的热处理区域。

    Light emitting device package with reliably formed switching unit
    2.
    发明授权
    Light emitting device package with reliably formed switching unit 有权

    公开(公告)号：US12295195B2

    公开(公告)日：2025-05-06

    申请号：US17565615

    申请日：2021-12-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joo-sung Kim ,  Jong-uk Seo ,  Dong-gun Lee ,  Young-jo Tak

    IPC: H10H29/14 ,  H10H20/01 ,  H10H20/815 ,  H10H20/851 ,  H10H20/853 ,  H10H20/857 ,  H10H20/812 ,  H10H20/825

    Abstract: A light emitting device package includes a cell array having a first surface and a second surface located opposite to the first surface and including, on a portion of a horizontal extension line of the first surface, semiconductor light emitting units each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially located on a layer surface including a sidewall of the first conductivity type semiconductor layer; wavelength converting units corresponding respectively to the semiconductor light emitting units and each arranged corresponding to the first conductivity type semiconductor layer; a barrier structure arranged between the wavelength converting units corresponding to the cell array; and switching units arranged in the barrier structure and electrically connected to the semiconductor light emitting units.

    Photomask, method of correcting error thereof, integrated circuit device manufactured by using the photomask, and method of manufacturing the integrated circuit device
    4.
    发明授权
    Photomask, method of correcting error thereof, integrated circuit device manufactured by using the photomask, and method of manufacturing the integrated circuit device 有权
    光掩模，校正误差的方法，使用光掩模制造的集成电路器件以及集成电路器件的制造方法

    公开(公告)号：US09588413B2

    公开(公告)日：2017-03-07

    申请号：US15258163

    申请日：2016-09-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang-hyun Kim ,  Seong-sue Kim ,  Dong-gun Lee

    IPC: G03F1/24 ,  G03F1/38 ,  G03F1/72 ,  G03F1/74

    CPC classification number: G03F1/24 ,  G03F1/38 ,  G03F1/72 ,  G03F1/74

    Abstract: Provided are a photomask and a method of correcting errors thereof. The photomask includes a multilayer reflection film covering one side surface of a substrate and an energy receiving layer covering the other side surface of the substrate. The method includes determining a local correction position on a frontside surface of the photomask according to a detected error of the photomask, and locally applying an energy beam to a backside surface region of the photomask aligned with the local correction position in a thickness direction of the photomask. The invention may be applicable to structures other than photomasks that benefit from modification of surface heights or selectively applied stress.

    Abstract translation: 提供一种光掩模和一种校正其错误的方法。 光掩模包括覆盖基板的一个侧表面的多层反射膜和覆盖基板的另一侧表面的能量接收层。 该方法包括根据检测到的光掩模误差确定光掩模的前表面上的局部校正位置，并将能量束局部地施加到与沿局部校正位置的局部校正位置对准的光掩模的背侧表面区域 光掩模 本发明可以应用于受到表面高度的改变或选择性施加的应力的光掩模以外的结构的影响。

    LIGHT EMITTING DEVICE PACKAGE
    5.
    发明申请
    LIGHT EMITTING DEVICE PACKAGE 有权

    公开(公告)号：US20220123047A1

    公开(公告)日：2022-04-21

    申请号：US17565615

    申请日：2021-12-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joo-sung KIM ,  Jong-uk Seo ,  Dong-gun Lee ,  Young-jo Tak

    IPC: H01L27/15 ,  H01L33/50 ,  H01L33/00 ,  H01L33/62

    Abstract: A light emitting device package includes a cell array having a first surface and a second surface located opposite to the first surface and including, on a portion of a horizontal extension line of the first surface, semiconductor light emitting units each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially located on a layer surface including a sidewall of the first conductivity type semiconductor layer; wavelength converting units corresponding respectively to the semiconductor light emitting units and each arranged corresponding to the first conductivity type semiconductor layer; a barrier structure arranged between the wavelength converting units corresponding to the cell array; and switching units arranged in the barrier structure and electrically connected to the semiconductor light emitting units.

    Light emitting device package
    6.
    发明授权
    Light emitting device package 有权

    公开(公告)号：US11217623B2

    公开(公告)日：2022-01-04

    申请号：US16244882

    申请日：2019-01-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joo-sung Kim ,  Jong-uk Seo ,  Dong-gun Lee ,  Young-jo Tak

    IPC: H01L27/15 ,  H01L33/50 ,  H01L33/00 ,  H01L33/62 ,  H01L33/12 ,  H01L33/32 ,  H01L33/06

    Abstract: A light emitting device package includes a cell array having a first surface and a second surface located opposite to the first surface and including, on a portion of a horizontal extension line of the first surface, semiconductor light emitting units each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially located on a layer surface including a sidewall of the first conductivity type semiconductor layer; wavelength converting units corresponding respectively to the semiconductor light emitting units and each arranged corresponding to the first conductivity type semiconductor layer; a barrier structure arranged between the wavelength converting units corresponding to the cell array; and switching units arranged in the barrier structure and electrically connected to the semiconductor light emitting units.

    METHOD OF INSPECTING SURFACE AND METHOD OF INSPECTING PHOTOMASK USING THE SAME
    9.
    发明申请
    METHOD OF INSPECTING SURFACE AND METHOD OF INSPECTING PHOTOMASK USING THE SAME 有权
    检查表面的方法和使用其检查光电子的方法

    公开(公告)号：US20160356727A1

    公开(公告)日：2016-12-08

    申请号：US15093770

    申请日：2016-04-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji-hoon Na ,  Dong-gun Lee ,  Byung-gook Kim ,  Rae-won Yi

    IPC: G01N21/956 ,  G01B11/00

    CPC classification number: G01N21/956 ,  G01B11/00 ,  G01N2021/95676 ,  G01N2201/103 ,  G03F1/84

    Abstract: A method of inspecting a surface includes loading an inspection object on a stage of a multibeam inspection device configured to generate a beam array, and scanning a plurality of inspection areas of the inspection object at a same time with the beam array, wherein one of the first inspection areas is smaller than an area formed by a quadrangle connecting respective centers of corresponding four adjacent beams of the beam array, and an adjacent area of the one first inspection area is not scanned with the beam array.

    Abstract translation: 检查表面的方法包括将检查对象加载在被配置为产生光束阵列的多光束检查装置的台上，并且与所述光束阵列同时扫描所述检查对象的多个检查区域，其中， 第一检查区域小于由连接梁阵列的对应的四个相邻梁的各个中心的四边形形成的区域，并且一个第一检查区域的相邻区域不被光束阵列扫描。

    Photomask, method of correcting error thereof, integrated circuit device manufactured by using the photomask, and method of manufacturing the integrated circuit device
    10.
    发明授权
    Photomask, method of correcting error thereof, integrated circuit device manufactured by using the photomask, and method of manufacturing the integrated circuit device 有权
    光掩模，校正误差的方法，使用光掩模制造的集成电路器件以及集成电路器件的制造方法

    公开(公告)号：US09465286B2

    公开(公告)日：2016-10-11

    申请号：US14565087

    申请日：2014-12-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang-hyun Kim ,  Seong-sue Kim ,  Dong-gun Lee

    IPC: G03F1/24 ,  G03F1/38 ,  G03F1/72 ,  G03F1/74 ,  G03F7/20

    CPC classification number: G03F1/24 ,  G03F1/38 ,  G03F1/72 ,  G03F1/74

    Abstract: Provided are a photomask and a method of correcting errors thereof. The photomask includes a multilayer reflection film covering one side surface of a substrate and an energy receiving layer covering the other side surface of the substrate. The method includes determining a local correction position on a frontside surface of the photomask according to a detected error of the photomask, and locally applying an energy beam to a backside surface region of the photomask aligned with the local correction position in a thickness direction of the photomask. The invention may be applicable to structures other than photomasks that benefit from modification of surface heights or selectively applied stress.

    Abstract translation: 提供一种光掩模和一种校正其错误的方法。 光掩模包括覆盖基板的一个侧表面的多层反射膜和覆盖基板的另一侧表面的能量接收层。 该方法包括根据检测到的光掩模的误差来确定光掩模的前表面上的局部校正位置，并且将能量束局部地施加到与沿局部校正位置的厚度方向对齐的光掩模的背面表面区域 光掩模 本发明可以应用于受到表面高度的改变或选择性施加的应力的光掩模以外的结构的影响。

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