A method of forming a three-dimensional memory is provided. A stacked structure including semiconductor layers and insulating layers arranged alternately is formed on a substrate. The stacked structure is patterned to form a mesh structure having first strips extending in a first direction and second strips extending in a second direction. The first strips and the second strips intersect with each other. The mesh structure has first holes. A dielectric layer is formed in each first hole. At least a portion of the first strips of the mesh structure is removed to form second holes and bit line stacked structures separated from each other. A charge storage layer is formed on sidewall and bottom of each second hole. A gate pillar extending in a third direction is formed on each charge storage layer in the second hole. Word lines extending in the first direction are formed on the gate pillars.