发明授权
- 专利标题： Graphene transistor
- 专利标题（中）： 石墨烯晶体管
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申请号： US14345093申请日： 2012-09-26
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公开(公告)号： US09171907B2公开(公告)日： 2015-10-27
- 发明人: Walt A. de Heer
- 申请人： Walt A. de Heer
- 申请人地址： US GA Atlanta
- 专利权人： Georgia Tech Research Corporation
- 当前专利权人： Georgia Tech Research Corporation
- 当前专利权人地址： US GA Atlanta
- 代理机构： Bockhop & Associates, LLC
- 代理商 Bryan W. Bockhop
- 国际申请： PCT/US2012/057249 WO 20120926
- 国际公布： WO2013/049144 WO 20130404
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/16 ; H01L29/66 ; H01L29/778 ; H01L29/06 ; H01L21/02 ; H01L29/165 ; H01L29/417 ; H01L29/78
摘要：
A transistor includes a silicon carbide crystal (110) having a silicon terminated face (112). A semiconducting-type graphene layer (120) is bonded to the silicon terminated face (112). A first semimetallic-type graphene layer (122) is contiguous with a first portion of the semiconducting-type graphene layer (120). A second semimetallic-type graphene layer (122) is contiguous with a second portion of the semiconducting-type graphene layer (120) that is spaced apart from the first portion. An insulator layer (132) is disposed on a portion of the semiconducting-type graphene layer (120). A gate conductive layer (134) disposed on the insulator layer (132) and spaced apart from the semiconducting-type graphene layer (120).
公开/授权文献
- US20140361250A1 Graphene Transistor 公开/授权日：2014-12-11
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