Invention Grant
US09171922B1 Combination finFET/ultra-thin body transistor structure and methods of making such structures 有权
组合finFET /超薄体晶体管结构及其制造方法

Combination finFET/ultra-thin body transistor structure and methods of making such structures
Abstract:
One illustrative device disclosed herein includes, among other things, an active layer positioned above a layer of insulating material, a fin positioned above the active layer, a gate insulation layer positioned on the active layer and on the fin, a conductive gate structure that is positioned around at least a portion of the fin and above at least a portion of the active layer, wherein the conductive gate structure comprises at least one work function adjusting metal layer positioned on the gate insulation layer, a first channel region defined in the fin under the conductive gate structure, and a second channel region defined in the active layer under the conductive gate structure.
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