Invention Grant
US09171922B1 Combination finFET/ultra-thin body transistor structure and methods of making such structures
有权
组合finFET /超薄体晶体管结构及其制造方法
- Patent Title: Combination finFET/ultra-thin body transistor structure and methods of making such structures
- Patent Title (中): 组合finFET /超薄体晶体管结构及其制造方法
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Application No.: US14329263Application Date: 2014-07-11
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Publication No.: US09171922B1Publication Date: 2015-10-27
- Inventor: Hui Zang , Bingwu Liu
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L21/338 ; H01L29/423 ; H01L27/088 ; H01L29/66

Abstract:
One illustrative device disclosed herein includes, among other things, an active layer positioned above a layer of insulating material, a fin positioned above the active layer, a gate insulation layer positioned on the active layer and on the fin, a conductive gate structure that is positioned around at least a portion of the fin and above at least a portion of the active layer, wherein the conductive gate structure comprises at least one work function adjusting metal layer positioned on the gate insulation layer, a first channel region defined in the fin under the conductive gate structure, and a second channel region defined in the active layer under the conductive gate structure.
Information query
IPC分类: