Invention Grant
- Patent Title: Strained structure of semiconductor device and method of making the strained structure
- Patent Title (中): 半导体器件的应变结构和制造应变结构的方法
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Application No.: US13487860Application Date: 2012-06-04
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Publication No.: US09171929B2Publication Date: 2015-10-27
- Inventor: Tsung-Lin Lee , Chih Chieh Yeh , Feng Yuan , Cheng-Yi Peng , Clement Hsingjen Wann
- Applicant: Tsung-Lin Lee , Chih Chieh Yeh , Feng Yuan , Cheng-Yi Peng , Clement Hsingjen Wann
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/092 ; H01L29/66 ; H01L29/10 ; H01L29/165 ; H01L21/8238 ; H01L21/02
Abstract:
An exemplary structure for a field effect transistor (FET) comprises a silicon substrate comprising a first surface; a channel portion over the first surface, wherein the channel portion has a second surface at a first height above the first surface, and a length parallel to first surface; and two source/drain (S/D) regions on the first surface and surrounding the channel portion along the length of the channel portion, wherein the two S/D regions comprise SiGe, Ge, Si, SiC, GeSn, SiGeSn, SiSn, or III-V material.
Public/Granted literature
- US20130285153A1 STRAINED STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE STRAINED STRUCTURE Public/Granted day:2013-10-31
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