Invention Grant
- Patent Title: Resistive memory cell fabrication methods and devices
- Patent Title (中): 电阻式存储单元制造方法和装置
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Application No.: US14463160Application Date: 2014-08-19
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Publication No.: US09172040B2Publication Date: 2015-10-27
- Inventor: Jun Liu , Michael P. Violette
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00 ; H01L21/02 ; H01L23/02 ; H01L27/24
Abstract:
A phase change memory cell and methods of fabricating the same are presented. The memory cell includes a variable resistance region and a top and bottom electrode. The shapes of the variable resistance region and the top electrode are configured to evenly distribute a current with a generally hemispherical current density distribution around the first electrode.
Public/Granted literature
- US20140363947A1 RESISTIVE MEMORY CELL FABRICATION METHODS AND DEVICES Public/Granted day:2014-12-11
Information query
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