发明授权
- 专利标题： Tunable semiconductor laser diode
- 专利标题（中）： 可调谐半导体激光二极管
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申请号： US13115301申请日： 2011-05-25
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公开(公告)号： US09172212B2公开(公告)日： 2015-10-27
- 发明人: Toshimitsu Kaneko
- 申请人： Toshimitsu Kaneko
- 申请人地址： JP Osaka
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka
- 代理机构： Smith, Gambrell & Russell LLP.
- 优先权： JP2010-122136 20100527
- 主分类号： H01S5/12
- IPC分类号： H01S5/12 ; H01S5/0625 ; B82Y20/00 ; H01S5/026 ; H01S5/028 ; H01S5/042 ; H01S5/06 ; H01S5/343
摘要：
A tunable LD with reduced number of the butt joint is disclosed. The tunable LD includes the reflector and a waveguide core. The reflector includes a plurality of segments each having a grating region and a space region adjacent to the grating region. The waveguide core includes a gain region extending in two segments adjacent to each other and a tuning region extending in two segments adjacent to each other and also adjacent to the segment for the gain region.
公开/授权文献
- US20110292955A1 TUNABLE SEMICONDUCTOR LASER DIODE 公开/授权日：2011-12-01