Invention Grant
US09176808B2 Storage device and nonvolatile memory device and operating method thereof
有权
存储装置和非易失性存储装置及其操作方法
- Patent Title: Storage device and nonvolatile memory device and operating method thereof
- Patent Title (中): 存储装置和非易失性存储装置及其操作方法
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Application No.: US13724011Application Date: 2012-12-21
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Publication No.: US09176808B2Publication Date: 2015-11-03
- Inventor: Hojun Shim , Je-Hyuck Song , Kwanggu Lee
- Applicant: Hojun Shim , Je-Hyuck Song , Kwanggu Lee
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0002559 20120109
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10
Abstract:
A storage device which includes a user area of a memory cell array; a buffer area configured to temporarily store compressed data to be written into the user area; and compressed data management logic configured to control the user area and the buffer area such that compressed data stored in the buffer area is written into the user area. The compressed data management logic manages compressed data to be written into the user area by an ECC block unit rather than by a page-size unit.
Public/Granted literature
- US20130179752A1 STORAGE DEVICE AND NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2013-07-11
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