Invention Grant
- Patent Title: Memory generating method of memory compiler and generated memory
- Patent Title (中): 内存生成方法的内存编译器和生成的内存
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Application No.: US14492687Application Date: 2014-09-22
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Publication No.: US09177624B1Publication Date: 2015-11-03
- Inventor: Hao Wu , Song-Wen Yang , Zhao-Yong Zhang , Kun-Ti Lee
- Applicant: FARADAY TECHNOLOGY CORPORATION
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: Faraday Technology Corp.
- Current Assignee: Faraday Technology Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201410193882 20140508
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C8/08 ; G11C5/14

Abstract:
A memory includes a logic controller, a word line driver, a boost circuit, plural capacitor circuits, plural memory cores, plural selectors, and plural output drivers. The logic controller generates a word line enabling signal and a boost enabling signal. The word line driver receives the word line enabling signal. The boost circuit receives the boost enabling signal. The plural capacitor circuits are connected between the boost circuit and the word line driver. Each of the plural memory cores is connected with the word line driver through plural word lines. The plural selectors are connected with the corresponding memory cores. The plural output drivers are connected with the corresponding selectors. The number of the plural memory cores is positively correlated with the number of the plural capacitor circuits.
Public/Granted literature
- US20150325275A1 MEMORY GENERATING METHOD OF MEMORY COMPILER AND GENERATED MEMORY Public/Granted day:2015-11-12
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