Invention Grant
US09177628B2 Semiconductor device with low voltage programming/erasing operations
有权
具有低电压编程/擦除操作的半导体器件
- Patent Title: Semiconductor device with low voltage programming/erasing operations
- Patent Title (中): 具有低电压编程/擦除操作的半导体器件
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Application No.: US14457398Application Date: 2014-08-12
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Publication No.: US09177628B2Publication Date: 2015-11-03
- Inventor: Takayuki Kawahara , Riichiro Takemura , Kazuo Ono
- Applicant: Hitachi, Ltd.
- Applicant Address: JP Tokyo
- Assignee: HITACHI, LTD.
- Current Assignee: HITACHI, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2008-259206 20081006
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C11/16 ; H01L27/22 ; G11C7/12 ; G11C7/18 ; G11C11/4094 ; G11C11/4097

Abstract:
An array configuration capable of supplying a necessary and sufficient current in a small area is achieved and a reference cell configuration suitable to temperature characteristics of a TMR element is achieved. In a memory using inversion of spin transfer switching, a plurality of program drivers are arranged separately along one global bit line, and one sense amplifier is provided to one global bit line. A reference cell to which “1” and “0” are programmed is shared by two arrays and a sense amplifier.
Public/Granted literature
- US20150036423A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-02-05
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