Invention Grant
US09177628B2 Semiconductor device with low voltage programming/erasing operations 有权
具有低电压编程/擦除操作的半导体器件

Semiconductor device with low voltage programming/erasing operations
Abstract:
An array configuration capable of supplying a necessary and sufficient current in a small area is achieved and a reference cell configuration suitable to temperature characteristics of a TMR element is achieved. In a memory using inversion of spin transfer switching, a plurality of program drivers are arranged separately along one global bit line, and one sense amplifier is provided to one global bit line. A reference cell to which “1” and “0” are programmed is shared by two arrays and a sense amplifier.
Public/Granted literature
Information query
Patent Agency Ranking
0/0