Invention Grant
- Patent Title: Ion gate method and apparatus
- Patent Title (中): 离子浇口法和装置
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Application No.: US12763092Application Date: 2010-04-19
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Publication No.: US09177770B2Publication Date: 2015-11-03
- Inventor: Mark A. Osgood , Ching Wu
- Applicant: Mark A. Osgood , Ching Wu
- Applicant Address: US MA Acton
- Assignee: Excellims Corporation
- Current Assignee: Excellims Corporation
- Current Assignee Address: US MA Acton
- Main IPC: H01J49/06
- IPC: H01J49/06 ; G01N27/62 ; C07B63/00
Abstract:
The present invention generally relates to systems and methods for transmitting beams of charged particles, and in particular to such systems and methods that employ defecting at least one set of grid elements into the same plane to form an ion gate. In addition, an operation method of closing a gate involving alternating voltages on the adjacent gate wires is described.
Public/Granted literature
- US20100200745A1 ION GATE METHOD AND APPARATUS Public/Granted day:2010-08-12
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