发明授权
- 专利标题： Methods of forming metal nitride materials
- 专利标题（中）： 形成金属氮化物材料的方法
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申请号： US13364671申请日： 2012-02-02
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公开(公告)号： US09177826B2公开(公告)日： 2015-11-03
- 发明人: Bernd Hintze , Frank Koschinsky
- 申请人： Bernd Hintze , Frank Koschinsky
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 主分类号： H01L21/32
- IPC分类号： H01L21/32 ; H01L21/321 ; H01L21/3205 ; H01L21/768
摘要：
Disclosed herein are various methods of forming metal nitride layers on various types of semiconductor devices. In one example, the method includes forming a layer of insulating material above a semiconducting substrate, performing a physical vapor deposition process to form a metal nitride layer above the layer of insulating material, wherein the metal nitride layer has an intrinsic as-deposited stress level, and performing at least one process operation on the metal nitride layer to reduce a magnitude of the intrinsic as-deposited stress level in the metal nitride layer.
公开/授权文献
- US20130203266A1 Methods of Forming Metal Nitride Materials 公开/授权日：2013-08-08
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