Invention Grant
US09178020B2 Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device
有权
石墨烯结构和石墨烯结构的制造方法，以及石墨烯装置和制造石墨烯装置的方法
- Patent Title: Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device
- Patent Title (中): 石墨烯结构和石墨烯结构的制造方法，以及石墨烯装置和制造石墨烯装置的方法
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Application No.: US14558923Application Date: 2014-12-03
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Publication No.: US09178020B2Publication Date: 2015-11-03
- Inventor: Byoung-lyong Choi , Eun-kyung Lee , Dong-mok Whang
- Applicant: SAMSUNG ELECTRONICS CO., LTD. , SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2011-0062482 20110627
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L23/58 ; H01L29/16 ; H01L21/02 ; H01L29/06 ; H01L29/66 ; H01L29/775 ; H01L29/786 ; B82Y10/00 ; H01L29/78 ; B82Y30/00 ; B82Y40/00
Abstract:
A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.
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