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US09178117B2 Light emitting device having interstitial elements in grain boundaries of barrier layer 有权
在阻挡层的晶界中具有间隙元素的发光器件

Light emitting device having interstitial elements in grain boundaries of barrier layer
Abstract:
A light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and an electrode on at least one of the first conductive semiconductor layers or the second semiconductor layer. The electrode includes an adhesive layer on the light emitting structure, a barrier layer on the adhesive layer, and a bonding layer on the barrier layer. The barrier layer includes a plurality of grain boundaries, and the grain boundaries include interstitial elements.
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