Invention Grant
- Patent Title: Light emitting device having interstitial elements in grain boundaries of barrier layer
- Patent Title (中): 在阻挡层的晶界中具有间隙元素的发光器件
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Application No.: US14057341Application Date: 2013-10-18
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Publication No.: US09178117B2Publication Date: 2015-11-03
- Inventor: Han Byul Kang
- Applicant: LG INNOTEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: KED & Associates LLP
- Priority: KR10-2012-0116370 20121019
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/165 ; H01L31/12 ; H01L33/00 ; H01L27/14 ; H01L31/0232 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L33/44 ; H01L21/285 ; H01L33/40 ; H01L21/02 ; H01L21/768 ; H01L23/532 ; H01L49/02 ; H01L33/32

Abstract:
A light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and an electrode on at least one of the first conductive semiconductor layers or the second semiconductor layer. The electrode includes an adhesive layer on the light emitting structure, a barrier layer on the adhesive layer, and a bonding layer on the barrier layer. The barrier layer includes a plurality of grain boundaries, and the grain boundaries include interstitial elements.
Public/Granted literature
- US20140110743A1 LIGHT EMITTING DEVICE Public/Granted day:2014-04-24
Information query
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