Invention Grant
- Patent Title: Wafer level optical device
- Patent Title (中): 晶圆级光学器件
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Application No.: US14009098Application Date: 2012-10-25
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Publication No.: US09182545B2Publication Date: 2015-11-10
- Inventor: Hiroshi Goto
- Applicant: Empire Technology Development LLC
- Applicant Address: US DE Wilmington
- Assignee: Empire Technology Development LLC
- Current Assignee: Empire Technology Development LLC
- Current Assignee Address: US DE Wilmington
- Agency: Turk IP Law, LLC
- International Application: PCT/US2012/062002 WO 20121025
- International Announcement: WO2014/065805 WO 20140501
- Main IPC: G02B6/12
- IPC: G02B6/12 ; G02B6/13 ; H01L31/0232 ; H01L27/146 ; H04N5/225

Abstract:
Technologies are generally described for fabricating a wafer level optical device using a plurality of substrates made of materials with a substantially compatible (e.g., same or similar) thermal expansion coefficient. An example device may include a first substrate including light-receiving or light-emitting elements, and a second substrate including optical elements located within through-holes of the second substrate. The through-holes can be configured to substantially align each of the light-receiving or light-emitting elements with a corresponding one of the optical elements. A thermal expansion coefficient of the second substrate can be configured to be substantially the same to a thermal expansion coefficient of the first substrate.
Public/Granted literature
- US20140169730A1 WAFER LEVEL OPTICAL DEVICE Public/Granted day:2014-06-19
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