Invention Grant
US09182671B2 Method for forming pattern, and composition for forming resist underlayer film
有权
形成图案的方法和用于形成抗蚀剂下层膜的组合物
- Patent Title: Method for forming pattern, and composition for forming resist underlayer film
- Patent Title (中): 形成图案的方法和用于形成抗蚀剂下层膜的组合物
-
Application No.: US13630340Application Date: 2012-09-28
-
Publication No.: US09182671B2Publication Date: 2015-11-10
- Inventor: Shinya Nakafuji , Satoru Murakami , Yoshio Takimoto , Masayuki Motonari
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR Corporation
- Current Assignee: JSR Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-218772 20110930; JP2012-182784 20120821
- Main IPC: H01L21/302
- IPC: H01L21/302 ; C08F10/00 ; G03F7/095 ; G03F7/038 ; C08G61/02 ; H01L21/027
Abstract:
A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Ar1 and Ar2 each independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask.
Public/Granted literature
- US20130084705A1 METHOD FOR FORMING PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM Public/Granted day:2013-04-04
Information query
IPC分类:
