公开(公告)号：US09447303B2

公开(公告)日：2016-09-20

申请号：US14669995

申请日：2015-03-26

Applicant: JSR CORPORATION

Inventor： Shin-ya Minegishi ,  Shin-ya Nakafuji ,  Satoru Murakami ,  Toru Kimura

IPC: G03F7/20 ,  C09D161/14 ,  H01L21/311 ,  G03F7/09 ,  G03F7/11 ,  C08K5/42 ,  C08L101/02

CPC classification number: C09D161/14 ,  C08K5/42 ,  C08L101/02 ,  G03F7/094 ,  G03F7/11 ,  H01L21/31144

Abstract: A composition for forming a resist underlayer film includes (A) a compound. The compound (A) includes a group represented by formula (1). R represents a monovalent organic group having 1 to 30 carbon atoms. The monovalent organic group represented by R does not include an oxygen atom at an end of the side adjacent the sulfur atom. * represents a bonding hand. The compound (A) preferably includes a ring which is an aromatic ring, a heteroaromatic ring, or a combination thereof. The bonding hand denoted by * in the group represented by the formula (1) is preferably linked directly or via an oxygen atom to the ring.

公开(公告)号：US09091922B2

公开(公告)日：2015-07-28

申请号：US13714406

申请日：2012-12-14

Applicant: JSR CORPORATION

Inventor： Shin-ya Nakafuji ,  Satoru Murakami ,  Kazuhiko Koumura ,  Yuushi Matsumura ,  Masayuki Motonari ,  Katsuhisa Mizoguchi

IPC: G03F7/11 ,  G03F7/09 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/091 ,  H01L21/0276

Abstract: A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—. R1 represents a hydrogen atom or a C1-30 monovalent hydrocarbon group. R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a C1-30 monovalent hydrocarbon group, a C1-30 monovalent oxyhydrocarbon group or a C1-30 monovalent sulfanilhydrocarbon group. p is an integer of 1 to 3.

Abstract translation: 用于形成抗蚀剂下层膜的树脂组合物包括具有芳环的树脂和具有由下式（i）表示的部分结构的交联剂。 X表示氧原子，硫原子，* -COO-或-NRA-。 R1表示氢原子或C1-30一价烃基。 R2表示羟基，磺胺基，氰基，硝基，C1-30一价烃基，C1-30一价羟基烃基或C1-30一价硫代烃基。 p为1〜3的整数。

公开(公告)号：US20140371466A1

公开(公告)日：2014-12-18

申请号：US14477306

申请日：2014-09-04

Applicant: JSR Corporation

Inventor： Yushi Matsumura ,  Shinya Minegishi ,  Satoru Murakami ,  Yusuke Anno ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Kyoyu Yasuda

IPC: G03F7/027 ,  G03F7/004

CPC classification number: G03F7/027 ,  B44C1/22 ,  C07D407/12 ,  C07D487/04 ,  G03F7/004 ,  G03F7/11 ,  H05K1/00

Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.

Abstract translation: 提供一种能够形成能够形成抗蚀剂下层膜的图案的方法，该方法能够在保持耐蚀刻性的同时使用碱液容易地除去。 本发明提供一种形成图案的方法，该方法包括：（1）使用含有具有可碱解官能团的化合物的形成抗蚀剂下层膜的组合物在基材上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模，通过干蚀刻抗蚀剂下层膜和基板在基板上形成图案; 和（4）用碱液除去抗蚀剂下层膜。

公开(公告)号：US08859185B2

公开(公告)日：2014-10-14

申请号：US13948107

申请日：2013-07-22

Applicant: JSR Corporation

Inventor： Shin-ya Minegishi ,  Yushi Matsumura ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Takanori Nakano ,  Satoru Murakami ,  Kyoyu Yasuda ,  Makoto Sugiura

IPC: G03F7/11 ,  G03F7/025 ,  G03F7/09 ,  C08G8/08 ,  C08L61/06

CPC classification number: G03F7/091 ,  C08G8/08 ,  C08L61/06 ,  G03F7/094

Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.

Abstract translation: 抗蚀剂下层膜形成组合物包括含有式（1）所示的重复单元，聚苯乙烯换算的重均分子量为3000〜10,000的聚合物和溶剂。 R 3〜R 8各自独立地表示下述式（2）所示的基团等。 R1表示单键等。 R2表示氢原子等。

公开(公告)号：US09046769B2

公开(公告)日：2015-06-02

申请号：US14477306

申请日：2014-09-04

Applicant: JSR Corporation

Inventor： Yushi Matsumura ,  Shinya Minegishi ,  Satoru Murakami ,  Yusuke Anno ,  Shinya Nakafuji ,  Kazuhiko Komura ,  Kyoyu Yasuda

IPC: G03F7/027 ,  G03F7/11 ,  B44C1/22 ,  C07D407/12 ,  C07D487/04 ,  H05K1/00 ,  G03F7/004

CPC classification number: G03F7/027 ,  B44C1/22 ,  C07D407/12 ,  C07D487/04 ,  G03F7/004 ,  G03F7/11 ,  H05K1/00

Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.

Abstract translation: 提供一种能够形成能够形成抗蚀剂下层膜的图案的方法，该方法能够在保持耐蚀刻性的同时使用碱液容易地除去。 本发明提供一种形成图案的方法，该方法包括：（1）使用含有具有可碱解官能团的化合物的形成抗蚀剂下层膜的组合物在基材上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模，通过干蚀刻抗蚀剂下层膜和基板在基板上形成图案; 和（4）用碱液除去抗蚀剂下层膜。

公开(公告)号：US09182671B2

公开(公告)日：2015-11-10

申请号：US13630340

申请日：2012-09-28

Applicant: JSR CORPORATION

Inventor： Shinya Nakafuji ,  Satoru Murakami ,  Yoshio Takimoto ,  Masayuki Motonari

IPC: H01L21/302 ,  C08F10/00 ,  G03F7/095 ,  G03F7/038 ,  C08G61/02 ,  H01L21/027

CPC classification number: G03F7/095 ,  C08G61/02 ,  C08G2261/3422 ,  G03F7/0384 ,  H01L21/0271

Abstract: A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Ar1 and Ar2 each independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask.

Abstract translation: 形成图案的方法包括使用第一组合物形成抗蚀剂下层膜，在基片上提供抗蚀剂下层膜。 第一组合物包括具有由下式（1）表示的结构单元的聚合物。 在式（1）中，Ar 1和Ar 2各自独立地表示由下式（2）表示的二价基团。 使用抗蚀剂组合物在抗蚀剂下层膜上设置抗蚀剂涂膜。 使用抗蚀剂涂膜形成抗蚀剂图案。 通过使用抗蚀剂图案作为掩模，依次干蚀刻抗蚀剂下层膜和基板，在基板上形成预定图案。

公开(公告)号：US20150197664A1

公开(公告)日：2015-07-16

申请号：US14669995

申请日：2015-03-26

Applicant: JSR CORPORATION

Inventor： Shin-ya MINEGISHI ,  Shin-ya Nakafuji ,  Satoru Murakami ,  Toru Kimura

IPC: C09D161/14

CPC classification number: C09D161/14 ,  C08K5/42 ,  C08L101/02 ,  G03F7/094 ,  G03F7/11 ,  H01L21/31144

Abstract: A composition for forming a resist underlayer film includes (A) a compound. The compound (A) includes a group represented by formula (1). R represents a monovalent organic group having 1 to 30 carbon atoms. The monovalent organic group represented by R does not include an oxygen atom at an end of the side adjacent the sulfur atom. * represents a bonding hand. The compound (A) preferably includes a ring which is an aromatic ring, a heteroaromatic ring, or a combination thereof. The bonding hand denoted by * in the group represented by the formula (1) is preferably linked directly or via an oxygen atom to the ring.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括（A）化合物。 化合物（A）包括由式（1）表示的基团。 R表示碳原子数为1〜30的1价有机基团。 由R表示的一价有机基团不包括邻近硫原子的一端的氧原子。 *表示粘合手。 化合物（A）优选包括芳香环，杂芳环或其组合的环。 由式（1）表示的基团中由*表示的键合键优选直接或经由氧原子与环连接。

公开(公告)号：US08871432B2

公开(公告)日：2014-10-28

申请号：US13852120

申请日：2013-03-28

Applicant: JSR Corporation

Inventor： Shin-ya Minegishi ,  Satoru Murakami ,  Yushi Matsumura ,  Kazuhiko Komura ,  Yoshio Takimoto ,  Shin-ya Nakafuji ,  Kyoyu Yasuda

IPC: G03F7/26 ,  G03F7/004 ,  G03F7/11 ,  G03F7/40 ,  G03F7/09 ,  C08G8/08 ,  C08G8/22 ,  C08G8/28 ,  C09D161/06

CPC classification number: G03F7/004 ,  C08G8/08 ,  C08G8/22 ,  C08G8/28 ,  C09D161/06 ,  G03F7/094 ,  G03F7/11 ,  G03F7/26 ,  G03F7/40

Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Abstract translation: 图案形成方法包括：（1）抗蚀剂下层膜形成步骤，通过涂布含有酚羟基的树脂的抗蚀剂下层膜形成组合物，在基材的上表面侧上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜的上表面侧形成抗蚀剂图案的抗蚀剂图案形成工序; （3）借助于抗蚀剂图案作为掩模，至少对抗蚀剂下层膜和基板进行干蚀刻的图案形成步骤，以在基板上形成图案; 以及（4）以（1）〜（4）的顺序用碱性溶液除去基板上的抗蚀剂下层膜的抗蚀剂下层膜除去工序。