Invention Grant
- Patent Title: Multi-layer interconnection structure
- Patent Title (中): 多层互连结构
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Application No.: US13939801Application Date: 2013-07-11
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Publication No.: US09184063B2Publication Date: 2015-11-10
- Inventor: Yong Suk Yang , In-Kyu You , Jae Bon Koo , Yong-Young Noh
- Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2009-0101136 20091023
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H05K1/09 ; H05K1/03 ; H05K1/02 ; H01L23/498 ; H05K3/40 ; H05K3/10 ; H05K3/12

Abstract:
Provided are a multi-layer interconnection structure and a manufacturing method thereof. The multi-layer interconnection structure includes a substrate; a first wiring on the substrate; an interlayer insulation layer on the first wiring; a second wiring on the interlayer insulation layer; and a via contact including at least one conductive filament penetrating through the interlayer insulation layer between the second wiring and the first wiring to be electrically connected to the first wiring and the second wiring.
Public/Granted literature
- US20130292160A1 MULTI-LAYER INTERCONNECTION STRUCTURE Public/Granted day:2013-11-07
Information query
IPC分类: