Invention Grant
- Patent Title: Floating gate memory cells in vertical memory
- Patent Title (中): 垂直存储器中的浮动存储单元
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Application No.: US13838297Application Date: 2013-03-15
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Publication No.: US09184175B2Publication Date: 2015-11-10
- Inventor: Charles H. Dennison , Akira Goda , John Hopkins , Fatma Arzum Simsek-Ege , Krishna K. Parat
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L27/115 ; H01L29/66
Abstract:
Floating gate memory cells in vertical memory. A control gate is formed between a first tier of dielectric material and a second tier of dielectric material. A floating gate is formed between the first tier of dielectric material and the second tier of dielectric material, wherein the floating gate includes a protrusion extending towards the control gate. A charge blocking structure is formed between the floating gate and the control gate, wherein at least a portion of the charge blocking structure wraps around the protrusion.
Public/Granted literature
- US20140264532A1 FLOATING GATE MEMORY CELLS IN VERTICAL MEMORY Public/Granted day:2014-09-18
Information query
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