Invention Grant
- Patent Title: Method of producing semiconductor wafer, and semiconductor wafer
- Patent Title (中): 制造半导体晶片和半导体晶片的方法
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Application No.: US14099425Application Date: 2013-12-06
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Publication No.: US09184240B2Publication Date: 2015-11-10
- Inventor: Masahiko Hata , Osamu Ichikawa , Yuji Urabe , Noriyuki Miyata , Tatsuro Maeda , Tetsuji Yasuda
- Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Current Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-130726 20110610
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/20 ; H01L21/28 ; H01L29/51 ; H01L29/66
Abstract:
There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include H2SeO3. The cleansing agent may further contain one or more substances selected from the group consisting of water, ammonium, and ethanol. When the surface of the compound semiconductor layer is made of InxGa1-xAs (0≦x≦1), the insulating layer is preferably made of Al2O3, and Al2O3 is preferably formed by ALD.
Public/Granted literature
- US20140091433A1 METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER Public/Granted day:2014-04-03
Information query
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