A native p-type metal oxide semiconductor (PMOS) device that exhibits a low threshold voltage and a high drive current over a varying range of short channel lengths and a method for fabricating the same is discussed in the present disclosure. The source and drain regions of the native PMOS device, each include a strained region, a heavily doped raised region, and a lightly doped region. The gate region includes a stacked layer of a gate oxide having a high-k dielectric material, a metal, and a contact metal. The high drive current of the native PMOS device is primarily influenced by the increased carrier mobility due to the strained regions, the lower drain resistance due to the raised regions, and the higher gate capacitance due to the high-k gate oxide of the native PMOS device.