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US09187821B2 Vacuum deposition sources having heated effusion orifices 有权
真空沉积源具有加热的积液孔

Vacuum deposition sources having heated effusion orifices
摘要:
The present invention provides deposition sources that can efficiently and controllably provide vaporized material for deposition of thin film materials. Deposition sources described herein can be used to deposit any desired material and are particularly useful for depositing high melting point materials at high evaporation rates. An exemplary application for deposition sources of the present invention is deposition of copper, indium, and gallium in the manufacture of copper indium gallium diselenide based photovoltaic devices.
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