Invention Grant
US09190405B2 Digital circuit design with semi-continuous diffusion standard cell
有权
数字电路设计采用半连续扩散标准电池
- Patent Title: Digital circuit design with semi-continuous diffusion standard cell
- Patent Title (中): 数字电路设计采用半连续扩散标准电池
-
Application No.: US14169592Application Date: 2014-01-31
-
Publication No.: US09190405B2Publication Date: 2015-11-17
- Inventor: Xiangdong Chen , Ohsang Kwon , Satyanarayana Sahu , Divya Gangadharan , Chih-Iung Kao , Renukprasad Shreedhar Hiremath , Animesh Datta , Qi Ye
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Arent Fox LLP
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/088 ; H01L29/06 ; G06F17/50 ; H01L23/528

Abstract:
A CMOS device including a standard cell includes first and second transistors with a gate between the first and second transistors. One active region extends between the first and second transistors and under the gate. In a first configuration, when drains/sources of the first and second transistors on the sides of the gate carry the same signal, the drains/sources are connected together and to the gate. In a second configuration, when a source of the first transistor on a side of the gate is connected to a source voltage and a drain/source of the second transistor on the other side of the gate carries a signal, the source of the first transistor is connected to the gate. In a third configuration, when sources of the first and second transistors on the sides of the gate are connected to a source voltage, the gate floats.
Public/Granted literature
- US20150221639A1 DIGITAL CIRCUIT DESIGN WITH SEMI-CONTINUOUS DIFFUSION STANDARD CELL Public/Granted day:2015-08-06
Information query
IPC分类: