发明授权
- 专利标题： FinFET device
- 专利标题（中）： FinFET器件
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申请号： US14190611申请日： 2014-02-26
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公开(公告)号： US09190465B2公开(公告)日： 2015-11-17
- 发明人: Kangguo Cheng , Balasubramanian S. Haran , Shom Ponoth , Theodorus E. Standaert , Tenko Yamashita
- 申请人： International Business Machines Corporation
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Cantor Colburn LLP
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/12 ; H01L29/04 ; H01L21/8234 ; H01L27/088 ; H01L21/84
摘要：
A method for fabricating a field effect transistor device includes removing a portion of a first semiconductor layer and a first insulator layer to expose a portion of a second semiconductor layer, wherein the second semiconductor layer is disposed on a second insulator layer, the first insulator layer is disposed on the second semiconductor layer, and the first semiconductor layer is disposed on the first insulator layer, removing portions of the first semiconductor layer to form a first fin disposed on the first insulator layer and removing portions of the second semiconductor layer to form a second fin disposed on the second insulator layer, and forming a first gate stack over a portion of the first fin and forming a second gate stack over a portion of the second fin.
公开/授权文献
- US20140175549A1 FINFET DEVICE 公开/授权日：2014-06-26
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