发明授权
- 专利标题: Method for providing a magnetoresistive element having small critical dimensions
- 专利标题(中): 提供具有小临界尺寸的磁阻元件的方法
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申请号: US11635830申请日: 2006-12-07
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公开(公告)号: US09196270B1公开(公告)日: 2015-11-24
- 发明人: Danning Yang , Guanghong Luo , Yun-Fei Li
- 申请人: Danning Yang , Guanghong Luo , Yun-Fei Li
- 申请人地址: US CA Fremont
- 专利权人: Western Digital (Fremont), LLC
- 当前专利权人: Western Digital (Fremont), LLC
- 当前专利权人地址: US CA Fremont
- 主分类号: G11B5/31
- IPC分类号: G11B5/31 ; G11B5/39 ; H01L21/311 ; H01L21/314
摘要:
The method and system for providing a magnetoresistive device are described. The method and system include depositing a plurality of magnetoresistive element layers which cover at least one device area and at least one field area. The method and system also include providing a single layer mask. The single layer mask covers a first portion of the magnetoresistive element layers in the device area(s) and exposes the magnetoresistive element layers in the field area(s). The method and system include defining the magnetoresistive element(s) using the single layer mask and depositing a hard bias layer on the device area(s) and the field area(s) after the magnetic element(s) are defined. The method and system further include performing a planarization after the hard bias layer is deposited.
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