Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14341601Application Date: 2014-07-25
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Publication No.: US09196349B2Publication Date: 2015-11-24
- Inventor: Kazutaka Miyano , Hiroki Fujisawa
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Priority: JP2013-165856 20130809
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C11/4074 ; G11C7/10 ; G11C7/22

Abstract:
A device includes an output circuit, a DLL (Delay Locked Loop) circuit including a first delay line receiving a first clock signal and outputting, in response to receiving the clock signal, a second clock signal supplied to the output circuit, and an ODT (On Die Termination) circuit receiving an ODT activation signal and outputting, in response to receiving the ODT activation signal, an ODT output signal supplied to the output circuit to set the output circuit in a resistance termination state, and the ODT circuit including a second delay line configured to be set by the DLL circuit in an equivalent delay amount that is equivalent to a delay amount of the first delay line, the ODT output signal being, in a first time-period during which the ODT activation signal is in an active state, generated by being conveyed via the second delay line in which the equivalent delay amount has been set.
Public/Granted literature
- US20150043299A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-02-12
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