发明授权
US09196355B2 Memory including a selector switch on a variable resistance memory cell
有权
存储器包括可变电阻存储单元上的选择器开关
- 专利标题： Memory including a selector switch on a variable resistance memory cell
- 专利标题（中）： 存储器包括可变电阻存储单元上的选择器开关
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申请号： US12957286申请日： 2010-11-30
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公开(公告)号： US09196355B2公开(公告)日： 2015-11-24
- 发明人: Andrea Redaelli , Agostino Pirovano
- 申请人： Andrea Redaelli , Agostino Pirovano
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Knobbe Martens Olson & Bear LLP
- 优先权： WOPCT/IT2009/000537 20091130
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L45/00 ; H01L21/02 ; G11C13/00 ; H01L27/24 ; H01L27/28
摘要：
Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.
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