Invention Grant
- Patent Title: Reducing noise in semiconductor devices
- Patent Title (中): 降低半导体器件的噪音
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Application No.: US13943254Application Date: 2013-07-16
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Publication No.: US09196370B2Publication Date: 2015-11-24
- Inventor: Vishal Sarin , Frankie F. Roohparvar , Jung Sheng Hoei
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/26 ; G11C11/56 ; G11C16/34
Abstract:
The present disclosure includes methods, devices, modules, and systems for reducing noise in semiconductor devices. One method embodiment includes applying a reset voltage to a control gate of a semiconductor device for a period of time. The method further includes sensing the state of the semiconductor device after applying the reset voltage.
Public/Granted literature
- US20130301357A1 REDUCING NOISE IN SEMICONDUCTOR DEVICES Public/Granted day:2013-11-14
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