Invention Grant
- Patent Title: Method for manufacturing interposer
- Patent Title (中): 内插制造方法
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Application No.: US13632614Application Date: 2012-10-01
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Publication No.: US09196506B2Publication Date: 2015-11-24
- Inventor: Hyung Jin Jeon , Jong In Ryu , Seung Wan Shin , Seon Hee Moon , Young Do Kweon , Seung Wook Park
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2009-0086614 20090914
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/498 ; H05K3/46 ; H05K3/24 ; H05K3/42

Abstract:
A method for manufacturing an interposer includes forming a via hole in an insulation plate including a resin or a ceramic; simultaneously forming resists for a first upper redistribution layer on the top surface of the insulation plate, and a resistor for a lower redistribution layer on the bottom surface of the insulation plate; plating copper to fill the via hole and simultaneously forming the first upper redistribution layer and the lower redistribution layer along a designed circuit pattern; and forming a first upper protection layer and a lower protection layer to expose a portion of the first upper redistribution layer and a portion of the lower redistribution layer.
Public/Granted literature
- US20130029031A1 METHOD FOR MANUFACTURING INTERPOSER Public/Granted day:2013-01-31
Information query
IPC分类: