SiGe SRAM butted contact resistance improvement

Invention Grant

US09196545B2 SiGe SRAM butted contact resistance improvement 有权

Title translation: SiGe SRAM对接触电阻改善

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Patent Title: SiGe SRAM butted contact resistance improvement
Patent Title (中): SiGe SRAM对接触电阻改善
Application No.: US14305427

Application Date: 2014-06-16
Publication No.: US09196545B2

Publication Date: 2015-11-24
Inventor: Chao-Hsuing Chen , Ling-Sung Wang , Chi-Yen Lin
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Eschweiler & Associates, LLC
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L27/088 ; H01L27/11 ; H01L27/02 ; H01L21/768 ; H01L29/78 ; H01L29/06 ; H01L29/165 ; H01L21/8234

SiGe SRAM butted contact resistance improvement

Abstract:

The present disclosure relates to a method for fabricating a butted a contact arrangement configured to couple two transistors, wherein an active region of a first transistor is coupled to a gate of a second transistor. The gate of the second transistor is formed from a gate material which comprises a dummy gate of the first transistor, and is configured to straddle a boundary between the active region of the first transistor and an isolation layer formed about the first transistor. The butted a contact arrangement results in a decreased contact resistance for the butted contact as compared to previous methods.

Abstract(Chinese):

本公开涉及一种用于制造对接的配置成耦合两个晶体管的接触装置的方法，其中第一晶体管的有源区耦合到第二晶体管的栅极。第二晶体管的栅极由包括第一晶体管的伪栅极的栅极材料形成，并且被配置为跨越第一晶体管的有源区域和围绕第一晶体管形成的隔离层之间的边界。与之前的方法相比，对接的接触布置导致对接触点的接触电阻降低。

Public/Granted literature

US20140295630A1 SiGe SRAM BUTTED CONTACT RESISTANCE IMPROVEMENT Public/Granted day:2014-10-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS