Invention Grant
- Patent Title: Method to form stepped dielectric for field plate formation
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Application No.: US14706595Application Date: 2015-05-07
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Publication No.: US09196692B2Publication Date: 2015-11-24
- Inventor: Sameer Pendharkar , Naveen Tipirneni
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L29/40 ; H01L21/311 ; H01L29/417 ; H01L29/66 ; H01L29/812 ; H01L29/20 ; H01L29/78
Abstract:
A semiconductor device is formed with a stepped field plate over at least three sequential regions in which a total dielectric thickness under the stepped field plate is at least 10 percent thicker in each region compared to the preceding region. The total dielectric thickness in each region is uniform. The stepped field plate is formed over at least two dielectric layers, of which at least all but one dielectric layer is patterned so that at least a portion of a patterned dielectric layer is removed in one or more regions of the stepped field plate.
Public/Granted literature
- US20150243742A1 METHOD TO FORM STEPPED DIELECTRIC FOR FIELD PLATE FORMATION Public/Granted day:2015-08-27
Information query
IPC分类:
