Invention Grant
- Patent Title: Selective deposition of diamond in thermal vias
- Patent Title (中): 在热通孔中选择性沉积金刚石
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Application No.: US14464406Application Date: 2014-08-20
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Publication No.: US09196703B2Publication Date: 2015-11-24
- Inventor: Karl D. Hobart , Tatyana I. Feygelson , Eugene I. Imhoff , Travis J. Anderson , Joshua D. Caldwell , Andrew D. Koehler , Bradford B. Pate , Marko J. Tadjer , Rajinder S. Sandhu , Vincent Gambin , Gregory Lewis , Ioulia Smorchkova , Mark Goorsky , Jeff McKay
- Applicant: Northrop Grumman Systems Corporation , The United States of America, as Represented by the Secretary of the Navy , The Regents of the University of California
- Applicant Address: US VA Falls Church US DC Washington US CA Oakland
- Assignee: Northrop Grumman Systems Corporation,The United States of America, as Represented by the Secretary of the Navy,The Regents of the University of California
- Current Assignee: Northrop Grumman Systems Corporation,The United States of America, as Represented by the Secretary of the Navy,The Regents of the University of California
- Current Assignee Address: US VA Falls Church US DC Washington US CA Oakland
- Agency: Miller IP Group, PLC
- Agent John A. Miller
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L21/3065 ; H01L21/311 ; H01L21/768 ; H01L23/373 ; H01L23/367 ; H01L29/16 ; H01L29/20 ; H01L29/778
Abstract:
A method for fabricating a semiconductor device, such as a GaN high electron mobility transistor (HEMT) device, including etching a thermal via into a back-side of a semiconductor substrate and depositing a diamond nucleation seed layer across the back-side of the substrate. The method further includes coating the diamond nucleation with a mask layer and removing mask material outside of the thermal via on the planar portions of the back-side of the substrate. The method includes removing portions of the diamond nucleation layer on the planar portions and then removing the remaining portion of the mask material in the thermal via. The method then includes depositing a bulk diamond layer within the thermal via on the remaining portion of the diamond nucleation layer so that diamond only grows in the thermal via and not on the planar portions of the substrate.
Public/Granted literature
- US20150056763A1 SELECTIVE DEPOSITION OF DIAMOND IN THERMAL VIAS Public/Granted day:2015-02-26
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