Invention Grant
- Patent Title: Magnetic field sensor for sensing external magnetic field
- Patent Title (中): 用于感应外部磁场的磁场传感器
-
Application No.: US13730534Application Date: 2012-12-28
-
Publication No.: US09207290B2Publication Date: 2015-12-08
- Inventor: Keng-Ming Kuo , Ding-Yeong Wang , Yung-Hung Wang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Chutung Township, Hsinchu County
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Chutung Township, Hsinchu County
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW101138875A 20121022
- Main IPC: G01R33/02
- IPC: G01R33/02 ; G01R33/06 ; H01L21/00 ; G01R33/09 ; G11B3/00

Abstract:
A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively.
Public/Granted literature
- US20140111195A1 MAGNETIC FIELD SENSOR FOR SENSING EXTERNAL MAGNETIC FIELD Public/Granted day:2014-04-24
Information query