公开(公告)号：US20140292312A1

公开(公告)日：2014-10-02

申请号：US13907960

申请日：2013-06-02

Applicant: Industrial Technology Research Institute

Inventor： Young-Shying Chen ,  Keng-Ming Kuo ,  Ding-Yeong Wang ,  Cheng-Wei Chien

IPC: G01D5/16

CPC classification number: G01R33/098

Abstract: A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.

Abstract translation: 一种基板上的3轴磁场传感器，包括具有用于感测X轴磁场的第一容易轴的第一隧道磁阻电阻器（TMR），具有用于感测Y轴的第二容易轴的第二TMR 轴磁场，用于感测Z轴磁场的平面外的磁传感器和参考单元。 第一容易轴和第二容易轴是正交的，并且包括具有平分方向的45±5度的角度。 平面外的磁传感器包括具有第一倾斜和第二倾斜的凹槽或凸起结构; 具有第三容易轴的第一斜面上的第三个TMR; 具有第四容易轴的第二斜面上的第四TMR; 以及与二等分方向正交并平行于第三容易轴和第四容易轴的中心轴。 参考单元具有平行于二等分方向的第五TMR和第五容易轴。

公开(公告)号：US20160291097A1

公开(公告)日：2016-10-06

申请号：US14967235

申请日：2015-12-11

Applicant: Industrial Technology Research Institute

Inventor： Keng-Ming Kuo ,  Ding-Yeong Wang

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: A tunneling magneto-resistor (TMR) device for sensing a magnetic field includes a first TMR sensor having a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. Each of the first and second MTJ devices has a pinned layer and a free layer. The pinned layer of each of the first and second MTJ devices has a pinned magnetization at a first pinned direction. The free layers of the first and second MTJ devices have a first free magnetization parallel to and a second free magnetization anti-parallel to a first easy-axis respectively.

Abstract translation: 用于感测磁场的隧道磁电阻器（TMR）装置包括具有并联连接的第一MTJ（磁性隧道结）装置和第二MTJ装置的第一TMR传感器。 第一和第二MTJ装置中的每一个具有钉扎层和自由层。 第一和第二MTJ装置中的每一个的钉扎层在第一钉扎方向上具有钉扎磁化。 第一和第二MTJ器件的自由层具有平行于第一容易轴的第一自由磁化和与第一容易轴平行的第二自由磁化。

公开(公告)号：US09207290B2

公开(公告)日：2015-12-08

申请号：US13730534

申请日：2012-12-28

Applicant: Industrial Technology Research Institute

Inventor： Keng-Ming Kuo ,  Ding-Yeong Wang ,  Yung-Hung Wang

IPC: G01R33/02 ,  G01R33/06 ,  H01L21/00 ,  G01R33/09 ,  G11B3/00

CPC classification number: G01R33/06 ,  G01R33/098 ,  G11B3/00 ,  H01L21/00 ,  H01L2221/00

Abstract: A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively.

Abstract translation: 公开了一种用于感测外部磁场的磁场传感器。 磁场传感器包括设置在底层电极上的至少两个磁性隧道结（MTJ）元件。 每个MTJ元件由顺序堆叠在一起的合成反铁磁层，阻挡层和自由层形成。 然后将顶部电极连接到自由层。 自由层可以是单个自由层，复合自由层，合成反铁磁自由层或合金自由层。 当电流施加到通过MTJ元件上方或下方的金属电路时，由MTJ元件产生的自由磁矩沿着参考轴线彼此反平行，并且由MTJ元件产生的磁矩之间的角度 参考轴分别为40至50度和130至140度。

公开(公告)号：US09810748B2

公开(公告)日：2017-11-07

申请号：US14967235

申请日：2015-12-11

Applicant: Industrial Technology Research Institute

Inventor： Keng-Ming Kuo ,  Ding-Yeong Wang

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: A tunneling magneto-resistor (TMR) device for sensing a magnetic field includes a first TMR sensor having a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. Each of the first and second MTJ devices has a pinned layer and a free layer. The pinned layer of each of the first and second MTJ devices has a pinned magnetization at a first pinned direction. The free layers of the first and second MTJ devices have a first free magnetization parallel to and a second free magnetization anti-parallel to a first easy-axis respectively.

公开(公告)号：US09069033B2

公开(公告)日：2015-06-30

申请号：US13907960

申请日：2013-06-02

Applicant: Industrial Technology Research Institute

Inventor： Young-Shying Chen ,  Keng-Ming Kuo ,  Ding-Yeong Wang ,  Cheng-Wei Chien

IPC: G01B7/14 ,  G01B7/30 ,  G01R33/06 ,  H01L43/08 ,  G01R33/09

CPC classification number: G01R33/098

Abstract: A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.

Abstract translation: 一种基板上的3轴磁场传感器，包括具有用于感测X轴磁场的第一容易轴的第一隧道磁阻电阻器（TMR），具有用于感测Y轴的第二容易轴的第二TMR 轴磁场，用于感测Z轴磁场的平面外的磁传感器和参考单元。 第一容易轴和第二容易轴是正交的，并且包括具有平分方向的45±5度的角度。 平面外的磁传感器包括具有第一倾斜和第二倾斜的凹槽或凸起结构; 具有第三容易轴的第一斜面上的第三个TMR; 具有第四容易轴的第二斜面上的第四TMR; 以及与二等分方向正交并平行于第三容易轴和第四容易轴的中心轴。 参考单元具有平行于二等分方向的第五TMR和第五容易轴。