Semiconductor structure with anti-etch structure in via and method for manufacturing the same

Invention Grant

US09209071B2 Semiconductor structure with anti-etch structure in via and method for manufacturing the same 有权

Title translation: 具有抗蚀蚀结构的半导体结构及其制造方法

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Patent Title: Semiconductor structure with anti-etch structure in via and method for manufacturing the same
Patent Title (中): 具有抗蚀蚀结构的半导体结构及其制造方法
Application No.: US14229264

Application Date: 2014-03-28
Publication No.: US09209071B2

Publication Date: 2015-12-08
Inventor: Geng-Shuoh Chang , Chun-Sheng Wu , Chun-Li Lin , Yi-Fang Li , Po-Hsiung Leu , Ding-I Liu
Applicant: Taiwan Semiconductor Manufacturing CO., LTD.
Applicant Address: TW Hsinchu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsinchu
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/768 ; H01L23/522 ; H01L23/532

Semiconductor structure with anti-etch structure in via and method for manufacturing the same

Abstract:

A semiconductor structure includes a semiconductor substrate, a dielectric layer formed over the semiconductor substrate, a first anti-etch layer, a second anti-etch layer and a conductive material. The dielectric layer has an opening. The first anti-etch layer is formed on the sidewall of the opening and made of a material having resistance to peroxide. The second anti-etch layer is formed over the first anti-etch layer and made of a material having resistance to acid. The conductive material is formed within the opening and in contact with the second anti-etch layer.

Abstract(Chinese):

半导体结构包括半导体衬底，形成在半导体衬底上的电介质层，第一抗蚀刻层，第二抗蚀刻层和导电材料。电介质层具有开口。第一抗蚀刻层形成在开口的侧壁上并由具有过氧化物的材料制成。第二抗蚀刻层形成在第一抗蚀刻层上并由耐酸性的材料制成。导电材料形成在开口内并与第二抗蚀刻层接触。

Public/Granted literature

US20150279729A1 Semiconductor Structure With Anti-Etch Structure In Via And Method For Manufacturing The Same Public/Granted day:2015-10-01

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）